View source for 18355888. THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF BY NON-CONFORMAL SELECTIVE DEPOSITION OF INSULATING SPACERS IN A MEMORY OPENING simplified abstract (SanDisk Technologies LLC)

=THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF BY NON-CONFORMAL SELECTIVE DEPOSITION OF INSULATING SPACERS IN A MEMORY OPENING=


==Organization Name==

[[:Category:SanDisk Technologies LLC|SanDisk Technologies LLC]]


[[Category:SanDisk Technologies LLC]]

==Inventor(s)==

[[:Category:Rahul Sharangpani of Fremont CA (US)|Rahul Sharangpani of Fremont CA (US)]][[Category:Rahul Sharangpani of Fremont CA (US)]]

[[:Category:Raghuveer S. Makala of Campbell CA (US)|Raghuveer S. Makala of Campbell CA (US)]][[Category:Raghuveer S. Makala of Campbell CA (US)]]

[[:Category:Adarsh Rajashekhar of Santa Clara CA (US)|Adarsh Rajashekhar of Santa Clara CA (US)]][[Category:Adarsh Rajashekhar of Santa Clara CA (US)]]

[[:Category:Fei Zhou of San Jose CA (US)|Fei Zhou of San Jose CA (US)]][[Category:Fei Zhou of San Jose CA (US)]]

[[:Category:Bing Zhou of San Jose CA (US)|Bing Zhou of San Jose CA (US)]][[Category:Bing Zhou of San Jose CA (US)]]

[[:Category:Senaka Kanakamedala of San Jose CA (US)|Senaka Kanakamedala of San Jose CA (US)]][[Category:Senaka Kanakamedala of San Jose CA (US)]]

[[:Category:Roshan Jayakhar Tirukkonda of Milpitas CA (US)|Roshan Jayakhar Tirukkonda of Milpitas CA (US)]][[Category:Roshan Jayakhar Tirukkonda of Milpitas CA (US)]]

[[:Category:Kartik Sondhi of Milpitas CA (US)|Kartik Sondhi of Milpitas CA (US)]][[Category:Kartik Sondhi of Milpitas CA (US)]]

==THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF BY NON-CONFORMAL SELECTIVE DEPOSITION OF INSULATING SPACERS IN A MEMORY OPENING - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18355888 titled 'THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF BY NON-CONFORMAL SELECTIVE DEPOSITION OF INSULATING SPACERS IN A MEMORY OPENING

The method described in the patent application involves forming a memory device by creating an alternating stack of insulating layers and sacrificial material layers over a substrate, then selectively growing a second sacrificial material to form a vertical stack of sacrificial material portions.

* Formation of an alternating stack of insulating layers and sacrificial material layers over a substrate
* Selective growth of a second sacrificial material to form a vertical stack of sacrificial material portions
* Creation of a memory opening fill structure with memory elements and a semiconductor channel
* Replacement of sacrificial material portions and layers with electrically conductive layers
* Innovative process for forming memory devices with improved performance and functionality

Potential Applications:
- Memory devices in electronic devices
- Semiconductor manufacturing industry
- Advanced memory technologies

Problems Solved:
- Enhancing memory device performance
- Improving memory device functionality
- Increasing memory device reliability

Benefits:
- Higher performance memory devices
- Enhanced functionality in electronic devices
- Improved reliability of memory technology

Commercial Applications:
Title: Advanced Memory Device Manufacturing Process
This technology could be used in the production of memory devices for various electronic applications, potentially leading to more efficient and reliable memory solutions in the market.

Questions about the technology:
1. How does the selective growth of sacrificial material improve memory device performance?
2. What are the potential cost implications of implementing this innovative memory device manufacturing process?

Frequently Updated Research:
Stay updated on the latest advancements in memory device manufacturing processes to ensure optimal performance and functionality in electronic devices.


==Original Abstract Submitted==

A method of forming a memory device includes forming an alternating stack of insulating layers including a first insulating material and sacrificial material layers including a first sacrificial material over a substrate, forming a memory opening through the alternating stack, performing a first selective material deposition process that selectively grows a second sacrificial material from physically exposed surfaces of the sacrificial material layers to form a vertical stack of sacrificial material portions; forming a memory opening fill structure in the memory opening, where the memory opening fill structure includes a vertical stack of memory elements and a vertical semiconductor channel, and replacing a combination of the vertical stack of sacrificial material portions and the sacrificial material layers with electrically conductive layers.



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[[Category:H01L23/522]]
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