View source for 18355745. THREE-DIMENSIONAL MEMORY DEVICE WITH REDUCED NEIGHBORING WORD LINE INTERFERENCE AND METHODS OF FORMING THE SAME simplified abstract (SanDisk Technologies LLC)

=THREE-DIMENSIONAL MEMORY DEVICE WITH REDUCED NEIGHBORING WORD LINE INTERFERENCE AND METHODS OF FORMING THE SAME=


==Organization Name==

[[:Category:SanDisk Technologies LLC|SanDisk Technologies LLC]]


[[Category:SanDisk Technologies LLC]]

==Inventor(s)==

[[:Category:Ramy Nashed Bassely Said of San Jose CA (US)|Ramy Nashed Bassely Said of San Jose CA (US)]][[Category:Ramy Nashed Bassely Said of San Jose CA (US)]]

[[:Category:Sarath Puthenthermadam of San Jose CA (US)|Sarath Puthenthermadam of San Jose CA (US)]][[Category:Sarath Puthenthermadam of San Jose CA (US)]]

[[:Category:Jiahui Yuan of San Francisco CA (US)|Jiahui Yuan of San Francisco CA (US)]][[Category:Jiahui Yuan of San Francisco CA (US)]]

[[:Category:Raghuveer S. Makala of Campbell CA (US)|Raghuveer S. Makala of Campbell CA (US)]][[Category:Raghuveer S. Makala of Campbell CA (US)]]

[[:Category:Longju Liu of Milpitas CA (US)|Longju Liu of Milpitas CA (US)]][[Category:Longju Liu of Milpitas CA (US)]]

[[:Category:Senaka Kanakamedala of San Jose CA (US)|Senaka Kanakamedala of San Jose CA (US)]][[Category:Senaka Kanakamedala of San Jose CA (US)]]

==THREE-DIMENSIONAL MEMORY DEVICE WITH REDUCED NEIGHBORING WORD LINE INTERFERENCE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18355745 titled 'THREE-DIMENSIONAL MEMORY DEVICE WITH REDUCED NEIGHBORING WORD LINE INTERFERENCE AND METHODS OF FORMING THE SAME

The memory device described in the patent application consists of a structure with alternating insulating and electrically conductive layers, a memory opening that extends vertically through the stack, a memory opening fill structure containing a memory film and a vertical semiconductor channel, and an interference reduction feature for a subset of the electrically conductive layers.

* The memory device includes alternating insulating and electrically conductive layers.
* A memory opening extends vertically through the stack.
* The memory opening fill structure contains a memory film and a vertical semiconductor channel.
* An interference reduction feature is provided for a subset of the electrically conductive layers.

Potential Applications:
- This technology could be used in the development of advanced memory devices for various electronic applications.
- It may find applications in the semiconductor industry for improving memory storage capabilities.

Problems Solved:
- Addresses interference issues in electrically conductive layers within memory devices.
- Enhances the performance and reliability of memory devices.

Benefits:
- Improved memory device performance.
- Enhanced reliability and durability of memory devices.
- Potential for increased data storage capacity.

Commercial Applications:
Title: Advanced Memory Device Technology for Enhanced Performance
This technology could be utilized in the production of high-performance memory devices for consumer electronics, data storage systems, and computing devices. The innovation could lead to more efficient and reliable memory solutions, potentially impacting the market for memory devices.

Questions about Memory Device Technology:
1. How does the interference reduction feature improve the performance of the memory device?
- The interference reduction feature helps minimize signal interference between electrically conductive layers, leading to enhanced performance and reliability of the memory device.

2. What are the potential implications of this technology in the semiconductor industry?
- This technology could revolutionize memory device production in the semiconductor industry by offering improved performance and reliability in memory storage solutions.


==Original Abstract Submitted==

A memory device includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, a memory opening fill structure located in the memory opening and containing a memory film and a vertical semiconductor channel; and a neighboring electrically conductive layer interference reduction feature provided for a first subset of the electrically conductive layers, such that a second subset of the electrically conductive layers lacks the neighboring electrically conductive layer interference reduction feature.



[[Category:H10B43/27]]
[[Category:H10B43/35]]
[[Category:CPC_H10B43/27]]