View source for 18353621. THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A MID-STACK SOURCE LAYER AND METHODS FOR FORMING THE SAME simplified abstract (SanDisk Technologies LLC)

=THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A MID-STACK SOURCE LAYER AND METHODS FOR FORMING THE SAME=


==Organization Name==

[[:Category:SanDisk Technologies LLC|SanDisk Technologies LLC]]


[[Category:SanDisk Technologies LLC]]

==Inventor(s)==

[[:Category:Naohiro Hosoda of Yokkaichi (JP)|Naohiro Hosoda of Yokkaichi (JP)]][[Category:Naohiro Hosoda of Yokkaichi (JP)]]

[[:Category:Kazuki Isozumi of Yokkaichi (JP)|Kazuki Isozumi of Yokkaichi (JP)]][[Category:Kazuki Isozumi of Yokkaichi (JP)]]

[[:Category:Masanori Tsutsumi of Yokkaichi (JP)|Masanori Tsutsumi of Yokkaichi (JP)]][[Category:Masanori Tsutsumi of Yokkaichi (JP)]]

==THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A MID-STACK SOURCE LAYER AND METHODS FOR FORMING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18353621 titled 'THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A MID-STACK SOURCE LAYER AND METHODS FOR FORMING THE SAME

==Simplified Explanation==

The memory device described in the patent application includes a complex structure of alternating insulating and conductive layers, with a vertical semiconductor channel extending through the layers. The channel is in contact with a source layer and is filled with a memory opening fill structure.

* The memory device consists of a first-tier alternating stack of insulating and conductive layers, a source layer, and a second-tier alternating stack above the source layer.
* A memory opening vertically extends through the first-tier stack, source layer, and second-tier stack, with a memory opening fill structure in place.
* The memory opening fill structure contains a vertical semiconductor channel that runs through the layers and is in contact with the source layer.

== Potential Applications ==
This technology could be applied in:
* High-density memory storage devices
* Advanced computing systems

== Problems Solved ==
This technology addresses:
* Increasing memory storage capacity
* Enhancing data processing speed

== Benefits ==
The benefits of this technology include:
* Improved memory device performance
* Enhanced data storage capabilities

== Potential Commercial Applications ==
This technology could be used in:
* Data centers
* Consumer electronics

== Possible Prior Art ==
One possible prior art for this technology could be:
* Vertical memory structures with semiconductor channels

== Unanswered Questions ==
=== How does this technology compare to existing memory devices in terms of speed and capacity? ===
The article does not provide a direct comparison with existing memory devices.

=== What are the potential challenges in scaling up this technology for mass production? ===
The article does not address the challenges in scaling up production for commercial applications.


==Original Abstract Submitted==

A memory device includes a first-tier alternating stack of first insulating layers and first electrically conductive layers, a source layer overlying the first-tier alternating stack, a second-tier alternating stack of second insulating layers and second electrically conductive layers overlying the source layer, a memory opening vertically extending through the first-tier alternating stack, the source layer, and the second-tier alternating stack, and a memory opening fill structure located in the memory opening. The memory opening fill structure includes a vertical semiconductor channel that extends through the first-tier alternating stack, the source layer, and the second-tier alternating stack. The vertical semiconductor channel has sidewall in contact with the source layer.



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