View source for 18353546. THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ETCH STOP STRUCTURES FOR WORD LINE CONTACTS AND METHODS OF EMPLOYING THE SAME simplified abstract (SanDisk Technologies LLC)

=THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ETCH STOP STRUCTURES FOR WORD LINE CONTACTS AND METHODS OF EMPLOYING THE SAME=


==Organization Name==

[[:Category:SanDisk Technologies LLC|SanDisk Technologies LLC]]


[[Category:SanDisk Technologies LLC]]

==Inventor(s)==

[[:Category:Hirofumi Tokita of Yokkaichi (JP)|Hirofumi Tokita of Yokkaichi (JP)]][[Category:Hirofumi Tokita of Yokkaichi (JP)]]

[[:Category:Akihisa Sai of Yokkaichi (JP)|Akihisa Sai of Yokkaichi (JP)]][[Category:Akihisa Sai of Yokkaichi (JP)]]

[[:Category:Masato Miyamoto of Yokkaichi (JP)|Masato Miyamoto of Yokkaichi (JP)]][[Category:Masato Miyamoto of Yokkaichi (JP)]]

==THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ETCH STOP STRUCTURES FOR WORD LINE CONTACTS AND METHODS OF EMPLOYING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18353546 titled 'THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ETCH STOP STRUCTURES FOR WORD LINE CONTACTS AND METHODS OF EMPLOYING THE SAME

==Simplified Explanation==

The method described in the patent application involves creating a semiconductor structure by forming alternating layers of insulating material and sacrificial material, transferring patterns through multiple process sequences, replacing sacrificial material layers with conductive layers, and using the final structure as etch stop structures during subsequent processes.

* Formation of alternating insulating and sacrificial material layers
* Creation of initial vertical stacks with insulating and dielectric material plates
* Transfer of patterns through multiple process sequences
* Replacement of sacrificial material layers with conductive layers
* Use of final structure as etch stop structures

== Potential Applications ==
The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits and microprocessors.

== Problems Solved ==
This technology solves the problem of improving the efficiency and precision of semiconductor manufacturing processes by providing a method for creating complex vertical structures with etch stop capabilities.

== Benefits ==
The benefits of this technology include enhanced control over the fabrication of semiconductor structures, increased device performance, and potential cost savings in the production of advanced electronic devices.

== Potential Commercial Applications ==
The technology described in this patent application has potential commercial applications in the semiconductor industry for the production of high-performance electronic devices with advanced vertical structures.

== Possible Prior Art ==
One possible prior art for this technology could be the use of sacrificial layers in semiconductor manufacturing processes to create intricate structures with specific properties.

=== Unanswered Questions ===

=== How does this technology compare to existing methods in terms of cost-effectiveness? ===
The cost-effectiveness of implementing this technology compared to traditional methods is not explicitly addressed in the patent application. Further analysis and comparison would be needed to determine the economic viability of adopting this approach.

=== What are the potential scalability limitations of this technology for mass production? ===
The scalability of this technology for mass production is not discussed in detail in the patent application. Understanding the potential limitations and challenges in scaling up this process would be crucial for its practical implementation on an industrial scale.


==Original Abstract Submitted==

A method of making a semiconductor structure includes forming an alternating stack of insulating layers and sacrificial material layers, forming initial vertical stacks of at least one initial insulating plate and at least one initial dielectric material plate, and performing a plurality of pattern transfer process sequences that transfers the pattern of the initial vertical stacks by different numbers of underlying layers to form final vertical stacks of at least one final insulating plate and at least one final dielectric material plate. Sacrificial material layers that underlie the final vertical stacks are replaced with electrically conductive layers. The final dielectric material plates or conductive material plates formed by replacement of the dielectric material plates are employed as etch stop structures during subsequent formation of layer contact via structures.



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