View source for 18352752. STAIRLESS THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF BY FORMING REPLACEMENT WORD LINES THROUGH MEMORY OPENINGS simplified abstract (SanDisk Technologies LLC)

=STAIRLESS THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF BY FORMING REPLACEMENT WORD LINES THROUGH MEMORY OPENINGS=


==Organization Name==

[[:Category:SanDisk Technologies LLC|SanDisk Technologies LLC]]


[[Category:SanDisk Technologies LLC]]

==Inventor(s)==

[[:Category:Naohiro Hosoda of Yokkaichi (JP)|Naohiro Hosoda of Yokkaichi (JP)]][[Category:Naohiro Hosoda of Yokkaichi (JP)]]

[[:Category:Kazuki Isozumi of Yokkaichi (JP)|Kazuki Isozumi of Yokkaichi (JP)]][[Category:Kazuki Isozumi of Yokkaichi (JP)]]

[[:Category:Takayuki Maekura of Yokkaichi (JP)|Takayuki Maekura of Yokkaichi (JP)]][[Category:Takayuki Maekura of Yokkaichi (JP)]]

[[:Category:Hiroyuki Ogawa of Nagoya (JP)|Hiroyuki Ogawa of Nagoya (JP)]][[Category:Hiroyuki Ogawa of Nagoya (JP)]]

[[:Category:Koichi Matsuno of Fremont CA (US)|Koichi Matsuno of Fremont CA (US)]][[Category:Koichi Matsuno of Fremont CA (US)]]

==STAIRLESS THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF BY FORMING REPLACEMENT WORD LINES THROUGH MEMORY OPENINGS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18352752 titled 'STAIRLESS THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF BY FORMING REPLACEMENT WORD LINES THROUGH MEMORY OPENINGS

==Simplified Explanation==

The semiconductor structure described in the patent application consists of an alternating stack of insulating layers and electrically conductive layers, memory openings that extend vertically through the stack, and memory opening fill structures containing vertical semiconductor channels and memory cells. Additionally, an integrated line-and-via structure is included, which features a metallic plate portion in contact with an electrically conductive layer and a metallic via portion that extends vertically through dielectric material plates.

* Alternating stack of insulating and conductive layers
* Memory openings extending vertically through the stack
* Memory opening fill structures with semiconductor channels and memory cells
* Integrated line-and-via structure with metallic plate and via portions

== Potential Applications ==
The technology described in the patent application could be applied in:
* Semiconductor memory devices
* Integrated circuits
* High-speed computing systems

== Problems Solved ==
The innovation addresses the following issues:
* Efficient memory storage in semiconductor structures
* Enhanced performance of integrated circuits
* Improved data processing speed

== Benefits ==
The technology offers the following benefits:
* Increased memory capacity
* Faster data access and retrieval
* Enhanced overall system performance

== Potential Commercial Applications ==
The technology could find commercial applications in:
* Consumer electronics
* Telecommunications
* Automotive electronics

== Possible Prior Art ==
One possible prior art for this technology could be the use of similar integrated line-and-via structures in semiconductor devices for memory storage and data processing.

=== Unanswered Questions ===

=== How does this technology compare to existing memory storage solutions in terms of speed and efficiency? ===
The article does not provide a direct comparison between this technology and existing memory storage solutions in terms of speed and efficiency. Further research and testing may be needed to determine the performance advantages of this innovation.

=== What are the potential challenges in implementing this technology on a large scale in commercial applications? ===
The article does not address the potential challenges in implementing this technology on a large scale in commercial applications. Factors such as cost, scalability, and compatibility with existing systems could pose challenges that need to be explored further.


==Original Abstract Submitted==

A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, memory openings vertically extending through the alternating stack, and memory opening fill structures located in the memory openings and including a respective vertical semiconductor channel and a respective vertical stack of memory cells. An integrated line-and-via structure is provided, which is a unitary structure including a metallic plate portion that is a portion of or laterally contacts an electrically conductive layer, and a metallic via portion that vertically extends through dielectric material plates that overlie the metallic plate portion.



[[Category:H10B43/27]]