View source for 18352269. SEMICONDUCTOR STRUCTURE (UNITED MICROELECTRONICS CORP.)

=SEMICONDUCTOR STRUCTURE=


==Organization Name==

[[:Category:UNITED MICROELECTRONICS CORP.|UNITED MICROELECTRONICS CORP.]]


[[Category:UNITED MICROELECTRONICS CORP.]]

==Inventor(s)==

[[:Category:Cheng-Tung Huang of Kaohsiung City (TW)|Cheng-Tung Huang of Kaohsiung City (TW)]][[Category:Cheng-Tung Huang of Kaohsiung City (TW)]]

[[:Category:Yanjou Chen of Yunlin County (TW)|Yanjou Chen of Yunlin County (TW)]][[Category:Yanjou Chen of Yunlin County (TW)]]

[[:Category:Chien-Yu Ko of Tainan City (TW)|Chien-Yu Ko of Tainan City (TW)]][[Category:Chien-Yu Ko of Tainan City (TW)]]

==SEMICONDUCTOR STRUCTURE==


This abstract first appeared for US patent application 18352269 titled 'SEMICONDUCTOR STRUCTURE




==Original Abstract Submitted==

Provided is a semiconductor structure including a circuit layer, an island-shaped conductive layer, a MRAM cell, a bit line and a conductive via. The circuit layer is disposed on a substrate. The island-shaped conductive layer is disposed on the circuit layer. The MRAM cell is disposed between the island-shaped conductive layer and the circuit layer, and is electrically connected to the island-shaped conductive layer and the circuit layer. The bit line is disposed on the island-shaped conductive layer. The conductive via is disposed between the bit line and the island-shaped conductive layer. The island-shaped conductive layer is in contact with a top surface of the MRAM cell.



[[Category:H10B61/00]]
[[Category:CPC_H10B61/22]]