View source for 18350552. THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING ETCH STOP STRUCTURES LOCATED BETWEEN TIERS simplified abstract (SanDisk Technologies LLC)

=THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING ETCH STOP STRUCTURES LOCATED BETWEEN TIERS=


==Organization Name==

[[:Category:SanDisk Technologies LLC|SanDisk Technologies LLC]]


[[Category:SanDisk Technologies LLC]]

==Inventor(s)==

[[:Category:Bing Zhou of San Jose CA (US)|Bing Zhou of San Jose CA (US)]][[Category:Bing Zhou of San Jose CA (US)]]

[[:Category:Monica Titus of Santa Clara CA (US)|Monica Titus of Santa Clara CA (US)]][[Category:Monica Titus of Santa Clara CA (US)]]

[[:Category:Raghuveer S. Makala of Campbell CA (US)|Raghuveer S. Makala of Campbell CA (US)]][[Category:Raghuveer S. Makala of Campbell CA (US)]]

[[:Category:Rahul Sharangpani of Fremont CA (US)|Rahul Sharangpani of Fremont CA (US)]][[Category:Rahul Sharangpani of Fremont CA (US)]]

[[:Category:Senaka Kanakamedala of San Jose CA (US)|Senaka Kanakamedala of San Jose CA (US)]][[Category:Senaka Kanakamedala of San Jose CA (US)]]

==THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING ETCH STOP STRUCTURES LOCATED BETWEEN TIERS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18350552 titled 'THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING ETCH STOP STRUCTURES LOCATED BETWEEN TIERS

The abstract describes a patent application for an etch stop structure formed within a memory opening in a semiconductor device.

* The etch stop structure may include a conductive etch stop plate or a semiconductor plug.
* The structure is formed within a first-tier memory opening that extends through alternating layers of insulating material and spacer material.
* A second-tier alternating stack is formed over the first-tier stack and the etch stop structure.

Potential Applications:
- Semiconductor manufacturing
- Memory devices
- Integrated circuits

Problems Solved:
- Control of etching processes
- Improving memory device performance
- Enhancing semiconductor device reliability

Benefits:
- Increased precision in semiconductor manufacturing
- Improved memory device functionality
- Enhanced overall performance of integrated circuits

Commercial Applications:
Title: Semiconductor Manufacturing Innovation for Enhanced Memory Devices
This technology could revolutionize the semiconductor industry by improving memory device performance and reliability. It has the potential to be widely adopted in the production of integrated circuits, leading to more advanced electronic devices.

Questions about the technology:
1. How does the etch stop structure improve the manufacturing process?
The etch stop structure helps control the etching process, ensuring precise and accurate fabrication of semiconductor devices.
2. What are the key benefits of using an etch stop structure in memory devices?
The use of an etch stop structure can lead to improved performance, reliability, and overall functionality of memory devices.


==Original Abstract Submitted==

A etch stop structure is formed a sacrificial memory opening fill structure formed within a first-tier memory opening vertically extending through a first-tier alternating stack of first insulating layers and first spacer material layers. The etch stop structure may include a conductive etch stop plate that is formed over a sacrificial memory opening fill material portion inside the first-tier memory opening, or may include a semiconductor plug which is selectively grown from sidewalls of an etch stop semiconductor material layer that is formed over the first-tier alternating stack. A second-tier alternating stack of second insulating layers and second spacer material layers is formed over the first-tier alternating stack and the etch stop structure.



[[Category:H10B43/27]]
[[Category:H10B41/27]]
[[Category:CPC_H10B43/27]]