View source for 18347752. METHODS OF FORMING MICROELECTRONIC DEVICES (Micron Technology, Inc.)

=METHODS OF FORMING MICROELECTRONIC DEVICES=


==Organization Name==

[[:Category:Micron Technology, Inc.|Micron Technology, Inc.]]


[[Category:Micron Technology, Inc.]]

==Inventor(s)==

[[:Category:Shuangqiang Luo of Boise ID (US)|Shuangqiang Luo of Boise ID (US)]][[Category:Shuangqiang Luo of Boise ID (US)]]

[[:Category:Indra V. Chary of Boise ID (US)|Indra V. Chary of Boise ID (US)]][[Category:Indra V. Chary of Boise ID (US)]]

[[:Category:Nancy M. Lomeli of Boise ID (US)|Nancy M. Lomeli of Boise ID (US)]][[Category:Nancy M. Lomeli of Boise ID (US)]]

[[:Category:Xiao Li of Boise ID (US)|Xiao Li of Boise ID (US)]][[Category:Xiao Li of Boise ID (US)]]

==METHODS OF FORMING MICROELECTRONIC DEVICES==


This abstract first appeared for US patent application 18347752 titled 'METHODS OF FORMING MICROELECTRONIC DEVICES




==Original Abstract Submitted==

A method of forming a microelectronic device includes forming a microelectronic device structure. The microelectronic device structure includes a stack structure comprising insulative structures and electrically conductive structures vertically alternating with the insulative structures, pillar structures extending vertically through the stack structure, an etch stop material vertically overlaying the stack structure, and a first dielectric material vertically overlying the etch stop material. The method further includes removing portions of the first dielectric material, the etch stop material, and an upper region of the stack structure to form a trench interposed between horizontally neighboring groups of the pillar structures, forming a liner material within the trench, and substantially filling a remaining portion of the trench with a second dielectric material to form a dielectric barrier structure.



[[Category:H10B43/27]]
[[Category:H01L21/768]]
[[Category:H10B43/10]]
[[Category:H10B43/35]]
[[Category:CPC_H10B43/27]]