View source for 18340419. MEMORY DEVICES INCLUDING VERTICAL STACK STRUCTURE, METHODS OF MANUFACTURING AND OPERATING THE SAME, AND ELECTRONIC APPARATUSES INCLUDING MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

=MEMORY DEVICES INCLUDING VERTICAL STACK STRUCTURE, METHODS OF MANUFACTURING AND OPERATING THE SAME, AND ELECTRONIC APPARATUSES INCLUDING MEMORY DEVICE=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Seyun Kim of Suwon-si (KR)|Seyun Kim of Suwon-si (KR)]][[Category:Seyun Kim of Suwon-si (KR)]]

[[:Category:Jooheon Kang of Hwaseong-si (KR)|Jooheon Kang of Hwaseong-si (KR)]][[Category:Jooheon Kang of Hwaseong-si (KR)]]

[[:Category:Yumin Kim of Suwon-si (KR)|Yumin Kim of Suwon-si (KR)]][[Category:Yumin Kim of Suwon-si (KR)]]

[[:Category:Garam Park of Suwon-si (KR)|Garam Park of Suwon-si (KR)]][[Category:Garam Park of Suwon-si (KR)]]

[[:Category:Hyunjae Song of Suwon-si (KR)|Hyunjae Song of Suwon-si (KR)]][[Category:Hyunjae Song of Suwon-si (KR)]]

[[:Category:Dongho Ahn of Hwaseong-si (KR)|Dongho Ahn of Hwaseong-si (KR)]][[Category:Dongho Ahn of Hwaseong-si (KR)]]

[[:Category:Seungyeul Yang of Suwon-si (KR)|Seungyeul Yang of Suwon-si (KR)]][[Category:Seungyeul Yang of Suwon-si (KR)]]

[[:Category:Myunghun Woo of Hwaseong-si (KR)|Myunghun Woo of Hwaseong-si (KR)]][[Category:Myunghun Woo of Hwaseong-si (KR)]]

[[:Category:Jinwoo Lee of Hwaseong-si (KR)|Jinwoo Lee of Hwaseong-si (KR)]][[Category:Jinwoo Lee of Hwaseong-si (KR)]]

[[:Category:Seungdam Hyun of Suwon-si (KR)|Seungdam Hyun of Suwon-si (KR)]][[Category:Seungdam Hyun of Suwon-si (KR)]]

==MEMORY DEVICES INCLUDING VERTICAL STACK STRUCTURE, METHODS OF MANUFACTURING AND OPERATING THE SAME, AND ELECTRONIC APPARATUSES INCLUDING MEMORY DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18340419 titled 'MEMORY DEVICES INCLUDING VERTICAL STACK STRUCTURE, METHODS OF MANUFACTURING AND OPERATING THE SAME, AND ELECTRONIC APPARATUSES INCLUDING MEMORY DEVICE

The memory device described in the abstract features a vertical stack structure with a gate electrode, a resistance change layer, a channel, an island structure, and a gate insulating layer.

* The gate electrode controls the flow of current in the memory device.
* The resistance change layer alters its resistance based on the applied voltage.
* The channel connects the gate electrode and the resistance change layer.
* The island structure is positioned between the resistance change layer and the channel, facilitating communication between the two.
* The gate insulating layer separates the gate electrode from the channel, preventing interference.

Potential Applications:
- This technology can be used in non-volatile memory devices for data storage.
- It can also be applied in neuromorphic computing for artificial intelligence applications.

Problems Solved:
- Provides a reliable and efficient method for storing and retrieving data.
- Enhances the performance of memory devices by optimizing the flow of current.

Benefits:
- Improved data storage capabilities.
- Enhanced computing efficiency.
- Potential for advanced AI applications.

Commercial Applications:
Title: "Enhanced Memory Devices for Data Storage and AI Applications"
This technology can be utilized in the development of high-speed, high-capacity memory devices for various industries such as data centers, consumer electronics, and automotive systems. Its application in neuromorphic computing can revolutionize artificial intelligence technology.

Questions about the technology:
1. How does the island structure contribute to the functionality of the memory device?
2. What are the potential limitations of this vertical stack structure in memory devices?


==Original Abstract Submitted==

A memory device including the vertical stack structure includes a gate electrode, a resistance change layer, a channel between the gate electrode and the resistance change layer, and an island structure between the resistance change layer and the channel and in contact with the resistance change layer and the channel, and a gate insulating layer between the gate electrode and the channel.



[[Category:H10B43/35]]
[[Category:G11C16/04]]
[[Category:H10B43/10]]
[[Category:H10B43/27]]
[[Category:CPC_H10B43/35]]