View source for 18340216. BIT LINE SENSE AMPLIFIER OF SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=BIT LINE SENSE AMPLIFIER OF SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:DONGGEON Kim of Suwon-si (KR)|DONGGEON Kim of Suwon-si (KR)]][[Category:DONGGEON Kim of Suwon-si (KR)]]

[[:Category:BOK-YEON Won of Suwon-si (KR)|BOK-YEON Won of Suwon-si (KR)]][[Category:BOK-YEON Won of Suwon-si (KR)]]

[[:Category:SELYUNG Yoon of Suwon-si (KR)|SELYUNG Yoon of Suwon-si (KR)]][[Category:SELYUNG Yoon of Suwon-si (KR)]]

[[:Category:JONGHYUK Kim of Suwon-si (KR)|JONGHYUK Kim of Suwon-si (KR)]][[Category:JONGHYUK Kim of Suwon-si (KR)]]

==BIT LINE SENSE AMPLIFIER OF SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18340216 titled 'BIT LINE SENSE AMPLIFIER OF SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME

==Simplified Explanation==

The abstract describes a bit line sense amplifier for a semiconductor memory device that includes sense amplifier blocks with PMOS or NMOS drivers, column selection units, complimentary column selection units, column selection lines, and complimentary column selection lines.

* Sense amplifier blocks detect and amplify signal differences between a bit line and a complimentary bit line.
* Column selection units connect the bit line and a local input/output line based on a first column selection signal.
* Complimentary column selection units connect the complimentary bit line and a complimentary local input/output line based on a second column selection signal.
* Column selection lines transmit the first column selection signal to each column selection unit.
* Complimentary column selection lines transmit the second column selection signal to each complimentary column selection unit.
* The column selection units and complimentary column selection units may be distributed between the sense amplifier blocks.

== Potential Applications ==
This technology can be applied in various semiconductor memory devices to improve the efficiency and speed of data read and write operations.

== Problems Solved ==
This technology solves the problem of accurately detecting and amplifying signal differences between bit lines in a semiconductor memory device.

== Benefits ==
The benefits of this technology include faster data processing, improved reliability, and enhanced performance of semiconductor memory devices.

== Potential Commercial Applications ==
This technology can be commercially applied in the manufacturing of various semiconductor memory devices such as RAM, flash memory, and SSDs.

== Possible Prior Art ==
One possible prior art for this technology could be the use of sense amplifiers in semiconductor memory devices to amplify and detect signal differences between bit lines.

== Unanswered Questions ==
1. How does the distribution of column selection units between sense amplifier blocks affect the overall performance of the semiconductor memory device?
2. Are there any specific design considerations that need to be taken into account when implementing this bit line sense amplifier in different types of semiconductor memory devices?


==Original Abstract Submitted==

A bit line sense amplifier of a semiconductor memory device includes: sense amplifier blocks including a PMOS driver or an NMOS driver that detects and amplifies a signal difference between a bit line and a complimentary bit line, and sequentially arranged in a bit line extending direction; column selection units that connect the bit line and a local input/output line according to a first column selection signal; complimentary column selection units that connect the complimentary bit line and a complimentary local input/output line according to a second column selection signal; column selection lines that transmit the first column selection signal to each of the column selection units; and complimentary column selection lines that transmit the second column selection signal to each of the complimentary column selection units. The column selection units and the complimentary column selection units may be disposed to be distributed between the sense amplifier blocks.



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