View source for 18326659. PROCESS PROXIMITY EFFECT CORRECTION METHOD AND PROCESS PROXIMITY EFFECT CORRECTION DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=PROCESS PROXIMITY EFFECT CORRECTION METHOD AND PROCESS PROXIMITY EFFECT CORRECTION DEVICE=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Dae Young Park of Suwon-si (KR)|Dae Young Park of Suwon-si (KR)]][[Category:Dae Young Park of Suwon-si (KR)]]

[[:Category:Jeong Hoon Ko of Suwon-si (KR)|Jeong Hoon Ko of Suwon-si (KR)]][[Category:Jeong Hoon Ko of Suwon-si (KR)]]

[[:Category:Seong Ryeol Kim of Suwon-si (KR)|Seong Ryeol Kim of Suwon-si (KR)]][[Category:Seong Ryeol Kim of Suwon-si (KR)]]

[[:Category:Young-Gu Kim of Suwon-si (KR)|Young-Gu Kim of Suwon-si (KR)]][[Category:Young-Gu Kim of Suwon-si (KR)]]

[[:Category:Tae Hoon Kim of Suwon-si (KR)|Tae Hoon Kim of Suwon-si (KR)]][[Category:Tae Hoon Kim of Suwon-si (KR)]]

[[:Category:Hyun Joong Kim of Suwon-si (KR)|Hyun Joong Kim of Suwon-si (KR)]][[Category:Hyun Joong Kim of Suwon-si (KR)]]

[[:Category:Young Ju Lee of Suwon-si (KR)|Young Ju Lee of Suwon-si (KR)]][[Category:Young Ju Lee of Suwon-si (KR)]]

==PROCESS PROXIMITY EFFECT CORRECTION METHOD AND PROCESS PROXIMITY EFFECT CORRECTION DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18326659 titled 'PROCESS PROXIMITY EFFECT CORRECTION METHOD AND PROCESS PROXIMITY EFFECT CORRECTION DEVICE

==Simplified Explanation==

The patent application describes a method for improving the dispersion of patterns through process proximity effect correction using machine learning.

* Training a sensitivity model with layout images and critical dimensions of patterns.
* Estimating sensitivity prediction values for patterns.
* Determining correction rates for layout critical dimensions based on estimated sensitivity values.

== Potential Applications ==
This technology can be applied in semiconductor manufacturing processes to enhance pattern dispersion and accuracy.

== Problems Solved ==
1. Addressing proximity effect issues in pattern formation.
2. Improving the overall quality and precision of patterns in manufacturing processes.

== Benefits ==
1. Enhanced pattern dispersion and accuracy.
2. Increased efficiency in manufacturing processes.
3. Reduction of errors and defects in pattern formation.


==Original Abstract Submitted==

Provided is a process proximity effect correction method capable of efficiently improving the dispersion of patterns. There is a process proximity effect correction method according to some embodiments, the process proximity effect correction method of a process proximity effect correction device for performing process proximity effect correction (PPC) of a plurality of patterns using a machine learning module executed by a processor, comprising: training a sensitivity model by inputting a layout image of the plurality of patterns and a layout critical dimension (CD) of the plurality of patterns into the machine learning module; estimating an after cleaning inspection critical dimension (ACI-CD) sensitivity prediction value of the plurality of patterns by inferring an ACI-CD prediction value of the plurality of patterns; and determining a correction rate of the layout CD of the plurality of patterns using the estimated sensitivity prediction value.



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