View source for 18314508. OPERATING AND TESTING SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=OPERATING AND TESTING SEMICONDUCTOR DEVICES=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Taewook Park of Suwon-si (KR)|Taewook Park of Suwon-si (KR)]][[Category:Taewook Park of Suwon-si (KR)]]

[[:Category:Eunhye Oh of Suwon-si (KR)|Eunhye Oh of Suwon-si (KR)]][[Category:Eunhye Oh of Suwon-si (KR)]]

[[:Category:Jisu Kang of Suwon-si (KR)|Jisu Kang of Suwon-si (KR)]][[Category:Jisu Kang of Suwon-si (KR)]]

[[:Category:Yongki Lee of Suwon-si (KR)|Yongki Lee of Suwon-si (KR)]][[Category:Yongki Lee of Suwon-si (KR)]]

==OPERATING AND TESTING SEMICONDUCTOR DEVICES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18314508 titled 'OPERATING AND TESTING SEMICONDUCTOR DEVICES

==Simplified Explanation==

The abstract of this patent application describes an operation method for a memory device. The method involves programming a test pattern in a normal area of the memory device. The test pattern is used to identify error bits and count the number of errors for each bit location. Faulty cells in the normal area are then repaired using redundancy cells in a redundancy area, based on the locations of the error bits and the error counts.

* The method involves programming a test pattern in a normal area of the memory device.
* Error bits and their locations are identified, along with an error count for each location.
* Faulty cells in the normal area are repaired using redundancy cells in a redundancy area.
* The repair process is based on the locations of the error bits and the error counts.

Potential applications of this technology:

* Memory devices: This method can be applied to various types of memory devices, such as RAM, ROM, and flash memory, to improve their reliability and performance.
* Data storage: By identifying and repairing faulty cells, this method can enhance the integrity and longevity of stored data.
* Error correction: The error counts obtained can be used for error correction techniques, ensuring accurate data retrieval.

Problems solved by this technology:

* Faulty cells: The method addresses the issue of faulty cells in memory devices, which can lead to data corruption and loss.
* Reliability: By repairing faulty cells, the method improves the overall reliability of memory devices.
* Performance: Identifying and repairing error bits can enhance the performance of memory devices by reducing read and write errors.

Benefits of this technology:

* Improved reliability: By repairing faulty cells, the method increases the reliability of memory devices, reducing the risk of data corruption.
* Enhanced performance: The identification and repair of error bits can improve the performance of memory devices by minimizing errors during read and write operations.
* Extended lifespan: By addressing faulty cells, the method can extend the lifespan of memory devices, ensuring their longevity and usability.


==Original Abstract Submitted==

An operation method of a memory device includes programming a test pattern in a normal area, obtaining locations of error bits with respect to the test pattern and an error count for each error bit location, and repairing faulty cells included in the normal area with redundancy cells in a redundancy area based on the locations of the error bits and the error counts.



[[Category:G11C29/36]]