View source for 18311161. VERTICAL SELF ALIGNED GATE ALL AROUND TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

=VERTICAL SELF ALIGNED GATE ALL AROUND TRANSISTOR=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Co., Ltd.|Taiwan Semiconductor Manufacturing Co., Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Yu-Xuan Huang of Hsinchu (TW)|Yu-Xuan Huang of Hsinchu (TW)]][[Category:Yu-Xuan Huang of Hsinchu (TW)]]

[[:Category:Hou-Yu Chen of Hsinchu (TW)|Hou-Yu Chen of Hsinchu (TW)]][[Category:Hou-Yu Chen of Hsinchu (TW)]]

[[:Category:Cheng-Ting Chung of Hsinchu (TW)|Cheng-Ting Chung of Hsinchu (TW)]][[Category:Cheng-Ting Chung of Hsinchu (TW)]]

[[:Category:Jin Cai of Hsinchu (TW)|Jin Cai of Hsinchu (TW)]][[Category:Jin Cai of Hsinchu (TW)]]

==VERTICAL SELF ALIGNED GATE ALL AROUND TRANSISTOR - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18311161 titled 'VERTICAL SELF ALIGNED GATE ALL AROUND TRANSISTOR

The method described in the patent application involves forming vertical gate all-around transistors by creating a stack of semiconductor layers on a lower source/drain region. This stack includes a first layer, a second layer on top of the first layer, and a third layer on top of the second layer. The first and third layers have similar compositions and can be selectively etched with respect to the second layer. The first and second layers can be selectively replaced with inner spacers, and the second layer can be replaced with a gate electrode.

* Formation of vertical gate all-around transistors
* Stack of semiconductor layers on a lower source/drain region
* Selective etching of first and third layers with respect to the second layer
* Replacement of first and second layers with inner spacers
* Replacement of second layer with a gate electrode

== Potential Applications ==
The technology can be applied in the semiconductor industry for the development of advanced transistors with improved performance and efficiency. It can also be used in the manufacturing of high-density integrated circuits for various electronic devices.

== Problems Solved ==
This technology addresses the need for more efficient and high-performance transistors in semiconductor devices. By forming vertical gate all-around transistors, it helps in enhancing the functionality and speed of electronic devices while reducing power consumption.

== Benefits ==
The benefits of this technology include improved transistor performance, increased efficiency, and reduced power consumption in electronic devices. It also enables the development of smaller and more compact integrated circuits with higher processing capabilities.

== Commercial Applications ==
The technology has potential commercial applications in the semiconductor industry for the production of advanced electronic devices such as smartphones, computers, and other consumer electronics. It can also be utilized in the development of specialized equipment for research and industrial purposes.

== Prior Art ==
Prior research in the field of semiconductor technology has focused on improving transistor design and performance. Various methods have been developed to enhance the efficiency and functionality of transistors in electronic devices.

== Frequently Updated Research ==
Ongoing research in semiconductor technology continues to explore new methods for optimizing transistor performance and efficiency. Researchers are constantly working on developing innovative solutions to meet the growing demands of the electronics industry.

== Questions about Vertical Gate All-Around Transistors ==
=== What are the key advantages of vertical gate all-around transistors over traditional transistor designs? ===
Vertical gate all-around transistors offer improved control over the flow of current, reduced leakage, and enhanced performance compared to traditional transistor designs.

=== How does the selective etching of semiconductor layers contribute to the formation of vertical gate all-around transistors? ===
The selective etching process allows for precise removal and replacement of semiconductor layers, enabling the formation of vertical gate all-around transistors with optimized performance and efficiency.


==Original Abstract Submitted==

A method for forming vertical gate all around transistors includes forming stack of semiconductor layers on a lower source/drain region. The stack of semiconductor layers includes a first layer, a second layer on the first layer, and a third layer on the second layer. The first and third layers have substantially identical compositions and are selectively etchable with respect to the second layer. The first and second layers can be selectively removed and replaced with inner spacers. The second layer can be selectively removed and replaced with a gate electrode.



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