View source for 18307563. SEMICONDUCTOR DEVICE HAVING SHIELDING STRUCTURE simplified abstract (SK hynix Inc.)

=SEMICONDUCTOR DEVICE HAVING SHIELDING STRUCTURE=


==Organization Name==

[[:Category:SK hynix Inc.|SK hynix Inc.]]


[[Category:SK hynix Inc.]]

==Inventor(s)==

[[:Category:Suk Hwan Choi of Icheon-si (KR)|Suk Hwan Choi of Icheon-si (KR)]][[Category:Suk Hwan Choi of Icheon-si (KR)]]

[[:Category:Sun Beom Lee of Icheon-si (KR)|Sun Beom Lee of Icheon-si (KR)]][[Category:Sun Beom Lee of Icheon-si (KR)]]

[[:Category:Jong Seok Jung of Icheon-si (KR)|Jong Seok Jung of Icheon-si (KR)]][[Category:Jong Seok Jung of Icheon-si (KR)]]

==SEMICONDUCTOR DEVICE HAVING SHIELDING STRUCTURE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18307563 titled 'SEMICONDUCTOR DEVICE HAVING SHIELDING STRUCTURE

==Simplified Explanation==

The semiconductor device described in the abstract is designed to transfer sensing voltage and internal voltage between different circuit areas while shielding the sensing voltage line. 

* The device includes a sensing voltage line that transfers a detected sensing voltage from the second circuit area to the first circuit area.
* It also features a first internal voltage line that transfers an internal voltage generated by a voltage driver in the first circuit area using the sensing voltage provided through the sensing voltage line to the second circuit area, while shielding the sensing voltage line.

== Potential Applications ==
This technology could be applied in various electronic devices that require efficient transfer of sensing and internal voltages between different circuit areas while maintaining signal integrity.

== Problems Solved ==
1. Efficient transfer of sensing and internal voltages between circuit areas.
2. Shielding of sensing voltage line to prevent interference.

== Benefits ==
1. Improved signal transfer efficiency.
2. Enhanced signal integrity.
3. Reduction of interference between circuit areas.

== Potential Commercial Applications ==
"Efficient Voltage Transfer Semiconductor Device for Electronics"

== Possible Prior Art ==
There may be prior art related to semiconductor devices designed for voltage transfer between circuit areas, but specific examples are not provided in this context.

== Unanswered Questions ==

=== How does this technology impact overall device performance? ===
The abstract does not provide information on the overall impact of this technology on the performance of the semiconductor device. Further details on any performance improvements or limitations would be beneficial.

=== Are there any specific design considerations for implementing this technology in different types of electronic devices? ===
The abstract does not mention any specific design considerations for implementing this technology in various electronic devices. Understanding any design constraints or requirements could be crucial for successful integration.


==Original Abstract Submitted==

A semiconductor device includes a sensing voltage line disposed between a first circuit area and a second circuit area, and configured to transfer a sensing voltage detected in the second circuit area to the first circuit area; and a first internal voltage line disposed between the first circuit area and the second circuit area, configured to transfer an internal voltage, generated by a voltage driver of the first circuit area using the sensing voltage provided through the sensing voltage line, to the second circuit area and configured to shield the sensing voltage line.



[[Category:G01R19/00]]
[[Category:H03K3/01]]