View source for 18306231. SEMICONDUCTOR DEVICE simplified abstract (United Microelectronics Corp.)

=SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:United Microelectronics Corp.|United Microelectronics Corp.]]


[[Category:United Microelectronics Corp.]]

==Inventor(s)==

[[:Category:Hung Hsun Shuai of Tainan City (TW)|Hung Hsun Shuai of Tainan City (TW)]][[Category:Hung Hsun Shuai of Tainan City (TW)]]

[[:Category:Chih-Jung Chen of Hsinchu County (TW)|Chih-Jung Chen of Hsinchu County (TW)]][[Category:Chih-Jung Chen of Hsinchu County (TW)]]

==SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18306231 titled 'SEMICONDUCTOR DEVICE

'''Simplified Explanation:'''
The semiconductor device described in the patent application consists of a substrate with a doped ring surrounding a first region, multiple contacts, and conductive lines. The doped ring contains a first doped region and several second doped regions, with the contacts connected to the second doped regions and the conductive lines linked to the contacts and other conductive layers in the first region.

* The device includes a substrate with distinct regions and a doped ring surrounding a central area.
* The doped ring comprises a first doped region and multiple second doped regions, with the first doped region enclosing the central area.
* The second doped regions are separated and located within the opening of the first doped region.
* Contacts are electrically connected to the second doped regions for external connections.
* Conductive lines connect the contacts to various conductive layers within the central area.

'''Potential Applications:'''
1. Semiconductor manufacturing
2. Electronics industry
3. Integrated circuit design

'''Problems Solved:'''
1. Efficient electrical connections in semiconductor devices
2. Enhanced performance of electronic components
3. Improved conductivity in integrated circuits

'''Benefits:'''
1. Increased reliability of semiconductor devices
2. Enhanced electrical connectivity
3. Improved overall performance of electronic systems

'''Commercial Applications:'''
The technology described in the patent application could have significant commercial applications in the semiconductor industry, particularly in the development of advanced electronic devices and integrated circuits. The improved electrical connectivity and performance enhancements offered by this innovation could lead to the creation of more efficient and reliable electronic products.

'''Prior Art:'''
While specific prior art related to this technology is not provided in the abstract, researchers interested in exploring similar innovations in the semiconductor field may consider reviewing patents related to doped semiconductor structures, conductive lines, and integrated circuit design.

'''Frequently Updated Research:'''
Researchers and industry professionals interested in staying up-to-date with advancements in semiconductor technology may find it beneficial to follow research publications and conferences focused on doped semiconductor structures, conductive materials, and integrated circuit design.

'''Questions about Semiconductor Device Technology:'''
1. What are the key advantages of using a doped ring structure in semiconductor devices?
2. How does the integration of multiple doped regions improve the performance of the device?


==Original Abstract Submitted==

A semiconductor device includes a substrate, a doped ring, a plurality of contacts, and a plurality of conductive lines. The substrate includes a first region and a second region surrounding the first region. The doped ring is located in the substrate in the second region and surrounds the first region. The doped ring includes a first doped region and a plurality of second doped regions. The first doped region is located in the substrate in the second region and surrounds the first region. The first doped region has an opening. The second doped regions are separated from each other and located in the substrate of the opening. The contacts are electrically connected to the second doped regions. The conductive lines are connected to the contacts and a plurality of conductive layers in the first region.



[[Category:H10B41/40]]
[[Category:H01L23/60]]
[[Category:H10B41/30]]
[[Category:CPC_H10B41/40]]