View source for 18300421. SELF-ALIGNED CONTACT WITH CT CUT AFTER RMG simplified abstract (International Business Machines Corporation)

=SELF-ALIGNED CONTACT WITH CT CUT AFTER RMG=


==Organization Name==

[[:Category:International Business Machines Corporation|International Business Machines Corporation]]


[[Category:International Business Machines Corporation]]

==Inventor(s)==

[[:Category:Ruilong Xie of Niskayuna NY (US)|Ruilong Xie of Niskayuna NY (US)]][[Category:Ruilong Xie of Niskayuna NY (US)]]

[[:Category:Chanro Park of Clifton Park NY (US)|Chanro Park of Clifton Park NY (US)]][[Category:Chanro Park of Clifton Park NY (US)]]

[[:Category:Min Gyu Sung of Latham NY (US)|Min Gyu Sung of Latham NY (US)]][[Category:Min Gyu Sung of Latham NY (US)]]

[[:Category:Juntao Li of Cohoes NY (US)|Juntao Li of Cohoes NY (US)]][[Category:Juntao Li of Cohoes NY (US)]]

[[:Category:Julien Frougier of Albany NY (US)|Julien Frougier of Albany NY (US)]][[Category:Julien Frougier of Albany NY (US)]]

==SELF-ALIGNED CONTACT WITH CT CUT AFTER RMG - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18300421 titled 'SELF-ALIGNED CONTACT WITH CT CUT AFTER RMG

'''Simplified Explanation:'''
The patent application describes a method for forming a semiconductor structure by creating gate cut trenches, depositing dielectric materials, and forming source/drain contacts for transistors.

'''Key Features and Innovation:'''
* Formation of gate cut trenches in specific regions.
* Deposition of dielectric liner and filler in the trenches.
* Etching of the dielectric liner to expose source/drain regions.
* Deposition of conductive material to form source/drain contacts.

'''Potential Applications:'''
This technology can be applied in the semiconductor industry for manufacturing advanced transistors and integrated circuits.

'''Problems Solved:'''
This method addresses the need for precise formation of semiconductor structures with improved performance and reliability.

'''Benefits:'''
* Enhanced control over transistor structure.
* Improved electrical properties.
* Increased efficiency in semiconductor manufacturing processes.

'''Commercial Applications:'''
The technology can be utilized in the production of high-performance electronic devices, leading to advancements in computing, telecommunications, and other industries.

'''Prior Art:'''
Readers can explore prior patents related to semiconductor structure formation, dielectric materials deposition, and transistor manufacturing processes.

'''Frequently Updated Research:'''
Stay informed about the latest developments in semiconductor technology, materials science, and nanofabrication techniques relevant to this innovation.

'''Questions about Semiconductor Structure Formation:'''
1. How does the method of forming gate cut trenches contribute to the performance of transistors?
2. What are the implications of using dielectric materials in semiconductor structure fabrication?


==Original Abstract Submitted==

Embodiments of present invention provide a method of forming a semiconductor structure. The method includes forming a gate cut trench in a first region between a first and a second metal gate and in a second region between a first and a second source/drain region of a first and a second transistor respectively; depositing a dielectric liner in the trench lining sidewalls and a bottom of the trench; depositing a dielectric filler inside the trench above the dielectric liner, the dielectric liner thereby surrounding a bottom and sidewalls of the dielectric filler; depositing a dielectric cap covering the dielectric liner in the first region; etching the dielectric liner in the second region to create an opening exposing the source/drain region of the first transistor; and depositing a conductive material in the opening to form a source/drain contact of the first transistor. A structure formed thereby is also provided.



[[Category:H01L27/088]]
[[Category:H01L21/8234]]
[[Category:CPC_H01L27/088]]