View source for 18298402. METAL CONTACT CONNECTION THROUGH DIFFUSION BREAK AREA simplified abstract (International Business Machines Corporation)

=METAL CONTACT CONNECTION THROUGH DIFFUSION BREAK AREA=


==Organization Name==

[[:Category:International Business Machines Corporation|International Business Machines Corporation]]


[[Category:International Business Machines Corporation]]

==Inventor(s)==

[[:Category:Sagarika Mukesh of ALBANY NY (US)|Sagarika Mukesh of ALBANY NY (US)]][[Category:Sagarika Mukesh of ALBANY NY (US)]]

[[:Category:Shravana Kumar Katakam of Lehi UT (US)|Shravana Kumar Katakam of Lehi UT (US)]][[Category:Shravana Kumar Katakam of Lehi UT (US)]]

[[:Category:Tao Li of Slingerlands NY (US)|Tao Li of Slingerlands NY (US)]][[Category:Tao Li of Slingerlands NY (US)]]

[[:Category:Ruilong Xie of Niskayuna NY (US)|Ruilong Xie of Niskayuna NY (US)]][[Category:Ruilong Xie of Niskayuna NY (US)]]

[[:Category:Nicholas Anthony Lanzillo of Wynantskill NY (US)|Nicholas Anthony Lanzillo of Wynantskill NY (US)]][[Category:Nicholas Anthony Lanzillo of Wynantskill NY (US)]]

[[:Category:Julien Frougier of Albany NY (US)|Julien Frougier of Albany NY (US)]][[Category:Julien Frougier of Albany NY (US)]]

==METAL CONTACT CONNECTION THROUGH DIFFUSION BREAK AREA - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18298402 titled 'METAL CONTACT CONNECTION THROUGH DIFFUSION BREAK AREA

'''Simplified Explanation:'''
The patent application describes a semiconductor structure with an array of transistors connected by a metal connection that spans from the frontside to the backside of the array.

* The structure includes an array of transistors on a semiconductor substrate.
* The array consists of a first transistor and a second transistor positioned next to each other.
* A metal connection links the first transistor to the second transistor, connecting a first metal contact on the frontside to a second metal contact on the backside.

'''Key Features and Innovation:'''
* Array of transistors on a semiconductor substrate.
* Metal connection linking transistors from frontside to backside.
* Efficient design for interconnecting transistors in a semiconductor structure.

'''Potential Applications:'''
This technology could be used in:
* Integrated circuits
* Microprocessors
* Memory devices

'''Problems Solved:'''
* Efficient interconnection of transistors in a semiconductor structure.
* Improved performance and reliability of electronic devices.

'''Benefits:'''
* Enhanced functionality of semiconductor devices.
* Increased efficiency in data processing.
* Improved overall performance of electronic systems.

'''Commercial Applications:'''
This technology has potential applications in the semiconductor industry for:
* Manufacturing of advanced electronic devices.
* Development of high-performance computing systems.

'''Prior Art:'''
Readers can explore prior art related to semiconductor structures, metal connections in transistors, and interconnection technologies in the semiconductor industry.

'''Frequently Updated Research:'''
Stay updated on the latest advancements in semiconductor technology, metal interconnects, and transistor design for cutting-edge electronic devices.

'''Questions about Semiconductor Structure:'''
1. How does the metal connection improve the performance of the array of transistors?
2. What are the potential challenges in implementing this semiconductor structure in practical electronic devices?


==Original Abstract Submitted==

Embodiments of present invention provide a semiconductor structure. The structure includes an array of transistors on a semiconductor substrate, the array of transistors including a first transistor and a second transistor, the second transistor being next to the first transistor; and a metal connection between the first transistor and the second transistor, wherein the metal connection connects a first metal contact at a frontside of the array of transistors to a second metal contact at a backside of the array of transistors. A method of forming the same is also provided.



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