View source for 18297094. MEMORY DEVICE, READ CLOCK GENERATION CIRCUIT, AND METHOD FOR CONTROLLING READ OPERATION IN MEMORY DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)

=MEMORY DEVICE, READ CLOCK GENERATION CIRCUIT, AND METHOD FOR CONTROLLING READ OPERATION IN MEMORY DEVICE=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.]]

==Inventor(s)==

[[:Category:SANJEEV KUMAR Jain of KANATA (CA)|SANJEEV KUMAR Jain of KANATA (CA)]][[Category:SANJEEV KUMAR Jain of KANATA (CA)]]

[[:Category:ATUL Katoch of KANATA (CA)|ATUL Katoch of KANATA (CA)]][[Category:ATUL Katoch of KANATA (CA)]]

==MEMORY DEVICE, READ CLOCK GENERATION CIRCUIT, AND METHOD FOR CONTROLLING READ OPERATION IN MEMORY DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18297094 titled 'MEMORY DEVICE, READ CLOCK GENERATION CIRCUIT, AND METHOD FOR CONTROLLING READ OPERATION IN MEMORY DEVICE

The present disclosure introduces a memory device with advanced features for efficient data storage and retrieval.

* Memory device includes a memory array, read-clock generation circuit, and local input/output circuit.
* Read-clock generation circuit generates a read enable signal based on various input signals.
* Local input/output circuit consists of column-address pass gates and read pass gates for data transfer.
* Column-address pass gates receive data from memory cells in a selected row.
* Read pass gates connect read bit-lines to bit-lines based on the read enable signal.
* Read enable signal is de-asserted after pre-charging the connected read bit-lines.

Potential Applications:
- This technology can be used in various electronic devices requiring high-speed memory access.
- It can enhance the performance of data storage systems in computers, smartphones, and other gadgets.

Problems Solved:
- Improves data access speed and efficiency in memory devices.
- Enhances overall performance and reliability of electronic devices.

Benefits:
- Faster data retrieval and storage capabilities.
- Improved efficiency and reliability of memory devices.
- Enhanced performance of electronic systems.

Commercial Applications:
Title: Advanced Memory Device Technology for Enhanced Data Storage
This technology can be utilized in the development of high-performance computers, smartphones, and other electronic devices. It can also be beneficial for data centers and cloud computing facilities seeking faster and more reliable memory solutions.

Prior Art:
Readers can explore prior patents related to memory devices, read-clock generation circuits, and local input/output circuits to understand the evolution of similar technologies.

Frequently Updated Research:
Researchers are constantly working on improving memory devices to meet the growing demands of data-intensive applications. Stay updated on the latest advancements in memory technology for potential future enhancements.

Questions about Memory Device Technology:
1. How does the read-clock generation circuit contribute to the efficiency of data retrieval in memory devices?
2. What are the key advantages of using local input/output circuits in memory devices?


==Original Abstract Submitted==

The present disclosure provides a memory device, which includes a memory array, a read-clock generation circuit, and a local input/output circuit. The read-clock generation circuit receives a sense amplifier enable signal, a first sense amplifier pre-charge signal, and a latched write enable signal to generate a first read enable signal. The local input/output circuit includes multiple pairs of column-address pass gates, and a pair of read pass gates. The plurality of pairs of column-address pass gates are configured to receive data from a bit-line pair of the memory cells in a row selected by an address signal. The pair of read pass gates connects a read bit-line pair to the bit-line pair in response to the first read enable signal being in a low-logic state. The first read enable signal is de-asserted after the read bit-line pair connected to the pair of read pass gates are pre-charged.



[[Category:G11C7/22]]
[[Category:G11C7/08]]
[[Category:G11C7/12]]
[[Category:CPC_G11C7/222]]