View source for 18296828. SEMICONDUCTOR DEVICE RELATED TO PERFORMANCE OF A PROGRAM OPERATION AND METHOD OF OPERATING THE SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)

=SEMICONDUCTOR DEVICE RELATED TO PERFORMANCE OF A PROGRAM OPERATION AND METHOD OF OPERATING THE SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:SK hynix Inc.|SK hynix Inc.]]


[[Category:SK hynix Inc.]]

==Inventor(s)==

[[:Category:Hyung Jin Choi of Icheon-si Gyeonggi-do (KR)|Hyung Jin Choi of Icheon-si Gyeonggi-do (KR)]][[Category:Hyung Jin Choi of Icheon-si Gyeonggi-do (KR)]]

[[:Category:Chan Hui Jeong of Icheon-si Gyeonggi-do (KR)|Chan Hui Jeong of Icheon-si Gyeonggi-do (KR)]][[Category:Chan Hui Jeong of Icheon-si Gyeonggi-do (KR)]]

==SEMICONDUCTOR DEVICE RELATED TO PERFORMANCE OF A PROGRAM OPERATION AND METHOD OF OPERATING THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18296828 titled 'SEMICONDUCTOR DEVICE RELATED TO PERFORMANCE OF A PROGRAM OPERATION AND METHOD OF OPERATING THE SEMICONDUCTOR DEVICE

==Simplified Explanation==

The semiconductor device described in the abstract includes multiple memory cell string groups and a peripheral circuit for program operations. The program operation controller controls the application of voltages to the memory cell string groups during program loops based on a program loop count.

* The semiconductor device includes first to n-th memory cell string groups with multiple memory cell strings.
* The peripheral circuit performs program operations on the memory cell string groups in program loops.
* The program operation controller controls the application of voltages to the memory cell string groups based on program loop counts.

== Potential Applications ==
This technology could be applied in:
* Flash memory devices
* Solid-state drives
* Embedded systems

== Problems Solved ==
This technology helps in:
* Efficient programming of memory cell string groups
* Improved control of program operations
* Enhanced performance of semiconductor devices

== Benefits ==
The benefits of this technology include:
* Faster program operations
* Higher efficiency in memory programming
* Enhanced reliability of semiconductor devices

== Potential Commercial Applications ==
A potential commercial application for this technology could be in:
* Memory storage devices for consumer electronics
* Data centers for high-speed data processing
* Automotive electronics for reliable storage solutions

== Possible Prior Art ==
One possible prior art for this technology could be:
* Previous methods of programming memory cell string groups in semiconductor devices

=== Unanswered Questions ===

=== How does this technology compare to existing methods of programming memory cell string groups in semiconductor devices? ===
This technology offers more efficient control and programming of memory cell string groups compared to traditional methods. It allows for better performance and reliability in semiconductor devices.

=== What are the specific voltage levels used in the application of precharge and turn-on voltages to the memory cell string groups? ===
The abstract does not provide specific details on the voltage levels used in this technology. Further research or examination of the patent application would be needed to determine the exact voltage levels utilized in the programming process.


==Original Abstract Submitted==

Provided herein is a semiconductor device and a method of operating the same. The semiconductor device includes first to n-th memory cell string groups, each including a plurality of memory cell strings, a peripheral circuit configured to sequentially perform program operations, each including a plurality of program loops, on the first to n-th memory cell string groups, and a program operation controller configured to control the peripheral circuit to apply a precharge voltage to a common source line and apply a turn-on voltage to one or more of a plurality of source select lines coupled to the first to n-th memory cell string groups in any one of the plurality of program loops, wherein a number of one or more source select lines to which the turn-on voltage is to be applied is determined based on a program loop count corresponding to of the one program loop.



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