View source for 18295851. MEMORY DEVICE PERFORMING TARGET REFRESH OPERATION AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)

=MEMORY DEVICE PERFORMING TARGET REFRESH OPERATION AND OPERATING METHOD THEREOF=


==Organization Name==

[[:Category:SK hynix Inc.|SK hynix Inc.]]


[[Category:SK hynix Inc.]]

==Inventor(s)==

[[:Category:Jung Taek You of Gyeonggi-do (KR)|Jung Taek You of Gyeonggi-do (KR)]][[Category:Jung Taek You of Gyeonggi-do (KR)]]

==MEMORY DEVICE PERFORMING TARGET REFRESH OPERATION AND OPERATING METHOD THEREOF - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18295851 titled 'MEMORY DEVICE PERFORMING TARGET REFRESH OPERATION AND OPERATING METHOD THEREOF

==Simplified Explanation==

The memory device described in the abstract includes a memory cell region with normal cells, row-hammer cells, and redundancy cells, as well as a repair control circuit and a column control circuit.

* Memory cell region with normal cells, row-hammer cells, and redundancy cells
* Repair control circuit provides repair addresses and row-hammer flag signals based on a row address
* Column control circuit activates redundancy column selection lines based on row-hammer flag signals or a comparison result of a column address and repair addresses

== Potential Applications ==
This technology could be applied in:
* Computer memory systems
* Data storage devices
* Embedded systems

== Problems Solved ==
This technology helps in:
* Preventing data corruption due to row-hammer effect
* Enhancing memory reliability and performance

== Benefits ==
The benefits of this technology include:
* Improved memory cell reliability
* Efficient repair of memory cells
* Enhanced data integrity

== Potential Commercial Applications ==
This technology could be commercially benefit:
* Memory chip manufacturers
* Data centers
* Electronics industry

== Possible Prior Art ==
One possible prior art related to this technology is the use of error correction codes (ECC) in memory systems to detect and correct memory errors.

== Unanswered Questions ==

=== How does this technology impact power consumption in memory devices? ===
The abstract does not provide information on the power consumption implications of this technology. Further research is needed to understand its impact on power efficiency.

=== What are the potential limitations of this memory device in terms of scalability? ===
The abstract does not address the scalability limitations of this memory device. It would be important to investigate how this technology performs in larger memory systems and if there are any constraints on scalability.


==Original Abstract Submitted==

A memory device includes: a memory cell region including normal cells coupled to normal column selection lines, and row-hammer cells and redundancy cells respectively coupled to redundancy column selection lines; a repair control circuit configured to provide repair addresses and row-hammer flag signals, corresponding to repair information, according to a row address; and a column control circuit configured to activate at least one of the redundancy column selection lines according to the row-hammer flag signals or a comparison result of a column address and the repair addresses.



[[Category:G11C29/00]]
[[Category:G11C29/44]]