View source for 18294889. POLISHING LIQUID FOR CMP, POLISHING LIQUID SET FOR CMP AND POLISHING METHOD simplified abstract (Resonac Corporation)

=POLISHING LIQUID FOR CMP, POLISHING LIQUID SET FOR CMP AND POLISHING METHOD=


==Organization Name==

[[:Category:Resonac Corporation|Resonac Corporation]]


[[Category:Resonac Corporation]]

==Inventor(s)==

[[:Category:Yasushi Kurata of Tokyo (JP)|Yasushi Kurata of Tokyo (JP)]][[Category:Yasushi Kurata of Tokyo (JP)]]

[[:Category:Tomohiro Iwano of Tokyo (JP)|Tomohiro Iwano of Tokyo (JP)]][[Category:Tomohiro Iwano of Tokyo (JP)]]

[[:Category:Noriaki Murakami of Tokyo (JP)|Noriaki Murakami of Tokyo (JP)]][[Category:Noriaki Murakami of Tokyo (JP)]]

[[:Category:Makoto Mizutani of Tokyo (JP)|Makoto Mizutani of Tokyo (JP)]][[Category:Makoto Mizutani of Tokyo (JP)]]

[[:Category:Shigeki Kubota of Tokyo (JP)|Shigeki Kubota of Tokyo (JP)]][[Category:Shigeki Kubota of Tokyo (JP)]]

[[:Category:Taira Onuma of Tokyo (JP)|Taira Onuma of Tokyo (JP)]][[Category:Taira Onuma of Tokyo (JP)]]

[[:Category:Masahiro Kanno of Tokyo (JP)|Masahiro Kanno of Tokyo (JP)]][[Category:Masahiro Kanno of Tokyo (JP)]]

==POLISHING LIQUID FOR CMP, POLISHING LIQUID SET FOR CMP AND POLISHING METHOD - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18294889 titled 'POLISHING LIQUID FOR CMP, POLISHING LIQUID SET FOR CMP AND POLISHING METHOD

The patent application describes a polishing liquid for Chemical Mechanical Polishing (CMP) containing abrasive grains, an additive, and water. The abrasive grains consist of cerium-based particles, and the additive includes specific compounds to enhance the polishing process.

* The polishing liquid includes abrasive grains with cerium-based particles for effective polishing.
* The additive in the liquid includes a 4-pyrone-based compound and a compound with multiple nitrogen atoms bonded to a hydroxyalkyl group.
* Another version of the polishing liquid includes picolinic acid as part of the additive, along with the compound with multiple nitrogen atoms bonded to a hydroxyalkyl group.

Potential Applications:
- Semiconductor manufacturing
- Optical lens polishing
- Metal surface finishing

Problems Solved:
- Improving polishing efficiency
- Enhancing surface smoothness
- Reducing defects in polished materials

Benefits:
- Increased polishing precision
- Enhanced surface quality
- Improved overall productivity

Commercial Applications:
The technology can be utilized in industries such as semiconductor manufacturing, optics, and metalworking to achieve high-quality polished surfaces efficiently.

Questions about the technology:
1. How does the use of cerium-based particles in the abrasive grains improve the polishing process?
2. What are the specific benefits of incorporating picolinic acid in the additive for CMP polishing liquids?


==Original Abstract Submitted==

A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, the additive includes (A1) a 4-pyrone-based compound represented by General Formula (1) below and (B) a compound having two or more nitrogen atoms to which a hydroxyalkyl group is bonded. A polishing liquid for CMP, containing: abrasive grains; an additive; and water, in which the abrasive grains include cerium-based particles, the additive includes (A2) picolinic acid and (B) a compound having two or more nitrogen atoms to which a hydroxyalkyl group is bonded.



[[Category:C09G1/02]]
[[Category:B24B37/04]]
[[Category:H01L21/3105]]
[[Category:CPC_C09G1/02]]