View source for 18288599. SEMICONDUCTOR DEVICE, DISPLAY APPARATUS, AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE simplified abstract (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)

=SEMICONDUCTOR DEVICE, DISPLAY APPARATUS, AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:SEMICONDUCTOR ENERGY LABORATORY CO., LTD.|SEMICONDUCTOR ENERGY LABORATORY CO., LTD.]]


[[Category:SEMICONDUCTOR ENERGY LABORATORY CO., LTD.]]

==Inventor(s)==

[[:Category:Yasuharu Hosaka of Tochigi (JP)|Yasuharu Hosaka of Tochigi (JP)]][[Category:Yasuharu Hosaka of Tochigi (JP)]]

[[:Category:Yasutaka Nakazawa of Tochigi (JP)|Yasutaka Nakazawa of Tochigi (JP)]][[Category:Yasutaka Nakazawa of Tochigi (JP)]]

[[:Category:Takashi Shiraishi of Tochigi (JP)|Takashi Shiraishi of Tochigi (JP)]][[Category:Takashi Shiraishi of Tochigi (JP)]]

[[:Category:Rai Sato of Tochigi (JP)|Rai Sato of Tochigi (JP)]][[Category:Rai Sato of Tochigi (JP)]]

[[:Category:Kenichi Okazaki of Atsugi (JP)|Kenichi Okazaki of Atsugi (JP)]][[Category:Kenichi Okazaki of Atsugi (JP)]]

==SEMICONDUCTOR DEVICE, DISPLAY APPARATUS, AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18288599 titled 'SEMICONDUCTOR DEVICE, DISPLAY APPARATUS, AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE

The abstract describes a miniaturized semiconductor device with multiple layers and regions in close proximity to each other.

* The semiconductor device includes a semiconductor layer, first and second conductive layers, a mask layer, a first insulating layer, and a third conductive layer.
* The first insulating layer covers the semiconductor layer, the first and second conductive layers, and the mask layer.
* The distance between the opposite end portions of the first and second conductive layers is less than or equal to 1 μm.

Potential Applications:
- This technology can be used in the development of advanced electronic devices such as microprocessors and sensors.
- It can also be applied in the manufacturing of high-density integrated circuits for various electronic applications.

Problems Solved:
- The technology addresses the need for miniaturization and increased functionality in semiconductor devices.
- It provides a solution for creating compact and efficient electronic components.

Benefits:
- Improved performance and efficiency in electronic devices.
- Enhanced functionality in a smaller form factor.
- Increased capabilities for advanced electronic applications.

Commercial Applications:
Title: Advanced Semiconductor Devices for High-Performance Electronics
This technology can be utilized in the production of smartphones, tablets, computers, and other consumer electronics. It can also be beneficial in the automotive industry for developing advanced vehicle systems.

Prior Art:
Readers can explore prior patents related to semiconductor devices, miniaturization techniques, and advanced electronic components to gain a deeper understanding of the technology's background and evolution.

Frequently Updated Research:
Stay updated on the latest advancements in semiconductor technology, miniaturization methods, and electronic device manufacturing processes to enhance the application and development of this innovative technology.

Questions about Semiconductor Devices:
1. How does the miniaturization of semiconductor devices impact their performance and efficiency?
2. What are the key challenges in manufacturing miniaturized semiconductor devices, and how does this technology address them?


==Original Abstract Submitted==

A miniaturized semiconductor device is provided. The semiconductor device includes a semiconductor layer over a substrate, a first conductive layer and a second conductive layer being apart from each other over the semiconductor layer, a mask layer in contact with a top surface of the first conductive layer, a first insulating layer covering the semiconductor layer, the first conductive layer, the second conductive layer, and the mask layer, and a third conductive layer overlapping with the semiconductor layer and being over the first insulating layer. The first insulating layer is in contact with a top surface and a side surface of the mask layer, a side surface of the first conductive layer, a top surface and a side surface of the second conductive layer, and a top surface of the semiconductor layer. The semiconductor device includes a region in which the distance between opposite end portions of the first conductive layer and the second conductive layer is less than or equal to 1 μm.



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