View source for 18287939. LAMINATED STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING LAMINATED STRUCTURE simplified abstract (Shin-Etsu Chemical Co., Ltd.)

=LAMINATED STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING LAMINATED STRUCTURE=


==Organization Name==

[[:Category:Shin-Etsu Chemical Co., Ltd.|Shin-Etsu Chemical Co., Ltd.]]


[[Category:Shin-Etsu Chemical Co., Ltd.]]

==Inventor(s)==

[[:Category:Takenori Watabe of Annaka-shi (JP)|Takenori Watabe of Annaka-shi (JP)]][[Category:Takenori Watabe of Annaka-shi (JP)]]

[[:Category:Hiroshi Hashigami of Annaka-shi (JP)|Hiroshi Hashigami of Annaka-shi (JP)]][[Category:Hiroshi Hashigami of Annaka-shi (JP)]]

[[:Category:Takahiro Sakatsume of Takasaki-shi (JP)|Takahiro Sakatsume of Takasaki-shi (JP)]][[Category:Takahiro Sakatsume of Takasaki-shi (JP)]]

==LAMINATED STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING LAMINATED STRUCTURE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18287939 titled 'LAMINATED STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING LAMINATED STRUCTURE

'''Simplified Explanation''': The patent application describes a laminated structure with a ground substrate coated with a crystalline oxide film containing gallium oxide as the main component. The surface of the film has a roughness of 0.2 μm or less, and the ground substrate has a diameter of 50 mm or more with a TTV of 30 μm or less.

'''Key Features and Innovation''':
* Laminated structure with a ground substrate and a crystalline oxide film
* Gallium oxide as the main component of the film
* Low roughness on the surface of the film
* Large diameter ground substrate
* Tight TTV specifications for the ground substrate

'''Potential Applications''':
This technology could be used in:
* Optoelectronic devices
* Semiconductor manufacturing
* Solar panels
* Optical coatings

'''Problems Solved''':
* Improved surface quality for better device performance
* Enhanced durability and reliability
* Consistent dimensions for manufacturing precision

'''Benefits''':
* Higher quality optoelectronic devices
* Increased efficiency in semiconductor production
* Longer-lasting solar panels
* Improved optical performance

'''Commercial Applications''':
Potential commercial uses include:
* Optoelectronics industry
* Semiconductor fabrication companies
* Solar energy sector
* Optical equipment manufacturers

'''Questions about the Technology''':
1. What are the specific advantages of using gallium oxide in the crystalline oxide film?
2. How does the low roughness on the film surface impact device performance?

'''Frequently Updated Research''':
Stay updated on the latest advancements in:
* Gallium oxide applications in optoelectronics
* Surface engineering for semiconductor devices


==Original Abstract Submitted==

A laminated structure including, a ground substrate with a crystalline oxide film containing gallium oxide as a main component and a root-mean-square of a roughness on a surface of the crystalline oxide film is 0.2 μm or less. A diameter of the ground substrate is 50 mm or more and TTV of the ground substrate is 30 μm or less.



[[Category:H01L29/04]]
[[Category:C30B25/16]]
[[Category:C30B25/18]]
[[Category:C30B29/16]]
[[Category:H01L21/02]]
[[Category:CPC_H01L29/04]]