View source for 18283803. SINGLE-CRYSTAL DIAMOND AND METHOD OF MANUFACTURING THE SAME simplified abstract (SUMITOMO ELECTRIC INDUSTRIES, LTD.)

=SINGLE-CRYSTAL DIAMOND AND METHOD OF MANUFACTURING THE SAME=


==Organization Name==

[[:Category:SUMITOMO ELECTRIC INDUSTRIES, LTD.|SUMITOMO ELECTRIC INDUSTRIES, LTD.]]


[[Category:SUMITOMO ELECTRIC INDUSTRIES, LTD.]]

==Inventor(s)==

[[:Category:Yikang Zuo of Osaka (JP)|Yikang Zuo of Osaka (JP)]][[Category:Yikang Zuo of Osaka (JP)]]

[[:Category:Jin Hwa Lee of Osaka (JP)|Jin Hwa Lee of Osaka (JP)]][[Category:Jin Hwa Lee of Osaka (JP)]]

[[:Category:Yoshiki Nishibayashi of Osaka (JP)|Yoshiki Nishibayashi of Osaka (JP)]][[Category:Yoshiki Nishibayashi of Osaka (JP)]]

[[:Category:Minori Teramoto of Osaka (JP)|Minori Teramoto of Osaka (JP)]][[Category:Minori Teramoto of Osaka (JP)]]

[[:Category:Yutaka Kobayashi of Osaka (JP)|Yutaka Kobayashi of Osaka (JP)]][[Category:Yutaka Kobayashi of Osaka (JP)]]

[[:Category:Hitoshi Sumiya of Osaka (JP)|Hitoshi Sumiya of Osaka (JP)]][[Category:Hitoshi Sumiya of Osaka (JP)]]

==SINGLE-CRYSTAL DIAMOND AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18283803 titled 'SINGLE-CRYSTAL DIAMOND AND METHOD OF MANUFACTURING THE SAME

==Simplified Explanation==

The patent application describes a single-crystal diamond with specific characteristics, including a narrow X-ray diffraction rocking curve, a peak at a specific Raman shift with a narrow half-width, low etch-pit density, and a controlled nitrogen content.

* Narrow X-ray diffraction rocking curve:
  - Half-width of 20 seconds or less
  - Measured with CuKα radiation in a (004) plane parallel arrangement
  - Utilizes a diamond crystal as the first crystal in X-ray diffraction by a double-crystal method

* Narrow peak at a specific Raman shift:
  - Raman shift in the range of 1332 cm to 1333 cm
  - Half-width of 2.0 cm or less

* Low etch-pit density:
  - 10,000/cm² or less
  - Measured in an etching test

* Controlled nitrogen content:
  - More than 0.1 ppm and 50 ppm or less based on the number of atoms

== Potential Applications ==
The technology could be applied in:
- High-performance electronics
- Advanced sensors
- Quantum computing

== Problems Solved ==
The technology addresses issues related to:
- Material quality in diamond-based devices
- Precision in diamond crystal manufacturing
- Performance consistency in diamond applications

== Benefits ==
The benefits of this technology include:
- Improved device performance
- Enhanced reliability
- Consistent quality in diamond materials

== Potential Commercial Applications ==
The technology could find commercial use in:
- Semiconductor industry
- Aerospace sector
- Medical equipment manufacturing

== Possible Prior Art ==
Prior art in diamond crystal manufacturing and characterization techniques may exist, but specific details are not provided in the abstract.

=== Unanswered Questions ===

== What are the specific methods used to measure the X-ray diffraction rocking curve in the patent application? ==
The patent application mentions using CuKα radiation in a (004) plane parallel arrangement, but the detailed methodology is not outlined.

== How does the controlled nitrogen content impact the properties of the single-crystal diamond? ==
The patent application states a specific range for nitrogen content, but the exact influence on the diamond's characteristics is not elaborated.


==Original Abstract Submitted==

A single-crystal diamond having an X-ray diffraction rocking curve with a half-width of 20 seconds or less, wherein the half-width of the X-ray diffraction rocking curve is measured with CuKα radiation in a (004) plane parallel arrangement using a diamond crystal as a first crystal in X-ray diffraction by a double-crystal method, a peak at a Raman shift in the range of 1332 cmto 1333 cmin a Raman spectrum has a half-width of 2.0 cmor less, the single-crystal diamond has an etch-pit density of 10,000/cmor less, the etch-pit density is measured in an etching test, and the single-crystal diamond has a nitrogen content of more than 0.1 ppm and 50 ppm or less based on the number of atoms.



[[Category:C30B29/04]]
[[Category:C30B19/00]]