View source for 18257874. SOLID-STATE IMAGING ELEMENT AND METHOD OF MANUFACTURING SAME simplified abstract (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)

=SOLID-STATE IMAGING ELEMENT AND METHOD OF MANUFACTURING SAME=


==Organization Name==

[[:Category:SONY SEMICONDUCTOR SOLUTIONS CORPORATION|SONY SEMICONDUCTOR SOLUTIONS CORPORATION]]


[[Category:SONY SEMICONDUCTOR SOLUTIONS CORPORATION]]

==Inventor(s)==

[[:Category:AKIHIKO Kato of KANAGAWA (JP)|AKIHIKO Kato of KANAGAWA (JP)]][[Category:AKIHIKO Kato of KANAGAWA (JP)]]

[[:Category:TOSHIHIRO Kurobe of KANAGAWA (JP)|TOSHIHIRO Kurobe of KANAGAWA (JP)]][[Category:TOSHIHIRO Kurobe of KANAGAWA (JP)]]

[[:Category:AKIKO Honjo of KANAGAWA (JP)|AKIKO Honjo of KANAGAWA (JP)]][[Category:AKIKO Honjo of KANAGAWA (JP)]]

[[:Category:KOICHI Baba of KANAGAWA (JP)|KOICHI Baba of KANAGAWA (JP)]][[Category:KOICHI Baba of KANAGAWA (JP)]]

[[:Category:NAOHIKO Kimizuka of KANAGAWA (JP)|NAOHIKO Kimizuka of KANAGAWA (JP)]][[Category:NAOHIKO Kimizuka of KANAGAWA (JP)]]

[[:Category:YOHEI Hirose of KANAGAWA (JP)|YOHEI Hirose of KANAGAWA (JP)]][[Category:YOHEI Hirose of KANAGAWA (JP)]]

[[:Category:TOYOTAKA Kataoka of KANAGAWA (JP)|TOYOTAKA Kataoka of KANAGAWA (JP)]][[Category:TOYOTAKA Kataoka of KANAGAWA (JP)]]

[[:Category:TAKUYA Toyofuku of KANAGAWA (JP)|TAKUYA Toyofuku of KANAGAWA (JP)]][[Category:TAKUYA Toyofuku of KANAGAWA (JP)]]

==SOLID-STATE IMAGING ELEMENT AND METHOD OF MANUFACTURING SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18257874 titled 'SOLID-STATE IMAGING ELEMENT AND METHOD OF MANUFACTURING SAME

==Simplified Explanation==

The abstract describes a solid-state imaging element with improved pixel transistor design to increase channel area and reduce parasitic capacitance of the gate.

* The pixel transistor includes a first gate electrode portion embedded in the substrate, a first gate insulating film between the active region and the gate electrode, and a thicker insulating film on the side surface of the gate electrode.
* The depth of the insulating film is the same as or deeper than the gate electrode, and the upper surface of the gate electrode is wider than the bottom surface in a cross-section.

== Potential Applications ==
This technology can be applied in digital cameras, smartphones, medical imaging devices, and surveillance systems.

== Problems Solved ==
This innovation solves the issue of limited channel area and high parasitic capacitance in pixel transistors, leading to improved image quality and performance in solid-state imaging elements.

== Benefits ==
The benefits of this technology include enhanced sensitivity, reduced noise, improved signal-to-noise ratio, and higher resolution in image capture devices.

== Potential Commercial Applications ==
Commercial applications of this technology include consumer electronics, medical imaging equipment, security cameras, and industrial inspection systems.

== Possible Prior Art ==
One possible prior art in this field is the use of trench isolation techniques to reduce parasitic capacitance in pixel transistors.

=== Unanswered Questions ===

=== How does this technology compare to existing pixel transistor designs in terms of performance and efficiency? ===
This article does not provide a direct comparison with existing pixel transistor designs to evaluate performance and efficiency differences.

=== What are the manufacturing costs associated with implementing this new pixel transistor design in solid-state imaging elements? ===
The article does not address the specific manufacturing costs involved in implementing this new design in solid-state imaging elements.


==Original Abstract Submitted==

There is provided a solid-state imaging element capable of increasing a channel area of a pixel transistor and reducing a parasitic capacitance of a gate. A solid-state imaging element is a solid-state imaging element including pixels that photoelectrically convert incident light, and includes a substrate on which the pixels are provided, a first transistor provided in the pixels and including a first gate electrode portion embedded in a first direction from a first surface of the substrate toward a second surface of the substrate opposite to the first surface, a first gate insulating film provided between an active region of the substrate in which a channel of the first transistor is formed and a first side surface of the first gate electrode portion facing the active region, and a first insulating film provided on a second side surface of the first gate electrode portion other than the first side surface and thicker than the first gate insulating film, in which a depth of the first insulating film from the first surface to the second surface of the substrate is substantially the same as or deeper than a depth of the first gate electrode portion, and a width of an upper surface of the first gate electrode portion is wider than a width of a bottom surface of the first gate electrode portion in a cross section in the first direction.



[[Category:H01L27/146]]