View source for 18255425. SEMICONDUCTOR DEVICE simplified abstract (Mitsubishi Electric Corporation)

=SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:Mitsubishi Electric Corporation|Mitsubishi Electric Corporation]]


[[Category:Mitsubishi Electric Corporation]]

==Inventor(s)==

[[:Category:Toshiro Hiramoto of Tokyo (JP)|Toshiro Hiramoto of Tokyo (JP)]][[Category:Toshiro Hiramoto of Tokyo (JP)]]

[[:Category:Takuya Saraya of Tokyo (JP)|Takuya Saraya of Tokyo (JP)]][[Category:Takuya Saraya of Tokyo (JP)]]

[[:Category:Kiyoshi Takeuchi of Tokyo (JP)|Kiyoshi Takeuchi of Tokyo (JP)]][[Category:Kiyoshi Takeuchi of Tokyo (JP)]]

[[:Category:Kazuo Itou of Tokyo (JP)|Kazuo Itou of Tokyo (JP)]][[Category:Kazuo Itou of Tokyo (JP)]]

[[:Category:Toshihiko Takakura of Tokyo (JP)|Toshihiko Takakura of Tokyo (JP)]][[Category:Toshihiko Takakura of Tokyo (JP)]]

[[:Category:Munetoshi Fukui of Tokyo (JP)|Munetoshi Fukui of Tokyo (JP)]][[Category:Munetoshi Fukui of Tokyo (JP)]]

[[:Category:Shinichi Suzuki of Tokyo (JP)|Shinichi Suzuki of Tokyo (JP)]][[Category:Shinichi Suzuki of Tokyo (JP)]]

[[:Category:Katsumi Satoh of Tokyo (JP)|Katsumi Satoh of Tokyo (JP)]][[Category:Katsumi Satoh of Tokyo (JP)]]

[[:Category:Tomoko Matsudai of Tokyo (JP)|Tomoko Matsudai of Tokyo (JP)]][[Category:Tomoko Matsudai of Tokyo (JP)]]

==SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18255425 titled 'SEMICONDUCTOR DEVICE

==Simplified Explanation==

The semiconductor device described in the patent application aims to reduce switching loss at turn-off while suppressing conduction loss. The device includes various layers and electrodes that work together to achieve this goal.

* The device consists of an emitter p layer, a collector p layer, a drift layer, an emitter electrode, a collector electrode, an emitter-side gate electrode, an emitter n layer, a collector p layer, a collector-side gate electrode, and a collector n layer.
* The total length of the first facing region of the emitter-side gate electrode in the gate width direction facing an emitter layer p via a gate insulating film is longer than the total length in the gate width direction of a second facing region of a collector-side gate electrode facing an impurity layer via a collector-side gate insulating film.

== Potential Applications ==
The technology described in this patent application could be applied in power electronics, such as in inverters, converters, and motor drives, to improve efficiency and reduce energy losses.

== Problems Solved ==
This technology addresses the issue of switching loss at turn-off in semiconductor devices, which can lead to inefficiencies and wasted energy. By reducing this loss, the device can operate more efficiently.

== Benefits ==
The main benefit of this technology is the reduction of switching loss at turn-off while suppressing conduction loss, leading to improved overall efficiency and performance of the semiconductor device.

== Potential Commercial Applications ==
A potential commercial application of this technology could be in the development of more efficient and reliable power electronics for various industries, including automotive, renewable energy, and industrial automation.

== Possible Prior Art ==
One possible prior art in this field could be the use of different gate electrode designs to improve the performance of semiconductor devices. Research and patents related to gate electrode structures and configurations may exist.

=== Unanswered Questions ===

=== How does this technology compare to existing solutions in terms of efficiency and cost-effectiveness? ===
This article does not provide a direct comparison with existing solutions in terms of efficiency and cost-effectiveness. Further research or testing would be needed to evaluate these aspects.

=== What are the potential challenges or limitations of implementing this technology on a larger scale? ===
The article does not address the potential challenges or limitations of implementing this technology on a larger scale, such as manufacturing scalability or compatibility with existing systems. Further analysis would be required to assess these factors.


==Original Abstract Submitted==

Provided is a semiconductor device capable of reducing switching loss at turn-off while suppressing conduction loss. An emitter p layer , a collector p layer , a drift layer , an emitter electrode , a collector electrode , an emitter-side gate electrode , an emitter n layer , a collector p layer , a collector-side gate electrode , and a collector n layer  configure a semiconductor device , and a total length of a first facing region of the emitter-side gate electrode  in a gate width direction facing an emitter layer p via a gate insulating film  is longer than the total length in the gate width direction of a second facing region of a collector-side gate electrode  facing an impurity layer via a collector-side gate insulating film 



[[Category:H01L29/739]]
[[Category:H01L29/06]]
[[Category:H01L29/861]]