View source for 18243350. MEMORY DEVICE, METHOD OF CALIBRATING SIGNAL LEVEL THEREOF, AND MEMORY SYSTEM HAVING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=MEMORY DEVICE, METHOD OF CALIBRATING SIGNAL LEVEL THEREOF, AND MEMORY SYSTEM HAVING THE SAME=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Youngdo Um of Suwon-si (KR)|Youngdo Um of Suwon-si (KR)]][[Category:Youngdo Um of Suwon-si (KR)]]

[[:Category:Jaewoo Park of Suwon-si (KR)|Jaewoo Park of Suwon-si (KR)]][[Category:Jaewoo Park of Suwon-si (KR)]]

[[:Category:Younghoon Son of Suwon-si (KR)|Younghoon Son of Suwon-si (KR)]][[Category:Younghoon Son of Suwon-si (KR)]]

[[:Category:Youngdon Choi of Suwon-si (KR)|Youngdon Choi of Suwon-si (KR)]][[Category:Youngdon Choi of Suwon-si (KR)]]

[[:Category:Junghwan Choi of Suwon-si (KR)|Junghwan Choi of Suwon-si (KR)]][[Category:Junghwan Choi of Suwon-si (KR)]]

==MEMORY DEVICE, METHOD OF CALIBRATING SIGNAL LEVEL THEREOF, AND MEMORY SYSTEM HAVING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18243350 titled 'MEMORY DEVICE, METHOD OF CALIBRATING SIGNAL LEVEL THEREOF, AND MEMORY SYSTEM HAVING THE SAME

==Simplified Explanation==

The abstract describes a method for calibrating the signal level of a memory device. The method involves several calibration techniques for different signaling methods, such as non-return-to-zero (NRZ) and pulse amplitude modulation level-4 (PAM4). 

* Pull-up code and pull-down code calibrations are performed to calibrate the signal level using a ZQ calibration for NRZ signaling.
* A most significant bit (MSB) code calibration is performed using an MSB additional driver for PAM4 signaling.
* A least significant bit (LSB) code calibration is performed using an LSB additional driver for PAM4 signaling.

Potential applications of this technology:

* Memory devices in various electronic devices such as smartphones, computers, and servers.
* Communication systems that utilize NRZ and PAM4 signaling methods.

Problems solved by this technology:

* Ensures accurate signal level calibration for memory devices using different signaling methods.
* Improves the reliability and performance of memory devices.

Benefits of this technology:

* Enhanced signal level calibration for memory devices, leading to improved data transmission and storage.
* Enables memory devices to support different signaling methods, increasing their versatility and compatibility.


==Original Abstract Submitted==

A method of calibrating a signal level of a memory device includes performing pull-up code and pull-down code calibrations, using a ZQ calibration for non-return-to-zero (NRZ) signaling, performing a most significant bit (MSB) code calibration, using an MSB additional driver for pulse amplitude modulation level-4 (PAM4) signaling, and performing a least significant bit (LSB) code calibration using an LSB additional driver for the PAM4 signaling.



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