View source for 18236637. SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

=SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Wonjun Park of Suwon-si (KR)|Wonjun Park of Suwon-si (KR)]][[Category:Wonjun Park of Suwon-si (KR)]]

[[:Category:Byongju Kim of Suwon-si (KR)|Byongju Kim of Suwon-si (KR)]][[Category:Byongju Kim of Suwon-si (KR)]]

[[:Category:Jaemin Jung of Suwon-si (KR)|Jaemin Jung of Suwon-si (KR)]][[Category:Jaemin Jung of Suwon-si (KR)]]

[[:Category:Kwangmin Park of Suwon-si (KR)|Kwangmin Park of Suwon-si (KR)]][[Category:Kwangmin Park of Suwon-si (KR)]]

[[:Category:Donghwa Lee of Suwon-si (KR)|Donghwa Lee of Suwon-si (KR)]][[Category:Donghwa Lee of Suwon-si (KR)]]

[[:Category:Dongsung Choi of Suwon-si (KR)|Dongsung Choi of Suwon-si (KR)]][[Category:Dongsung Choi of Suwon-si (KR)]]

==SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18236637 titled 'SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM INCLUDING SEMICONDUCTOR DEVICE

==Simplified Explanation==
The semiconductor device described in the patent application consists of a substrate, a stack structure with alternating layers of insulating material and a gate electrode, a channel layer that crosses the substrate through the stack structure, and a gate dielectric layer between the gate electrode and the channel layer. The gate dielectric layer includes a tunneling layer, a charge storage layer, and a blocking layer in sequence on the channel layer, with the tunneling layer containing a carbon-containing layer closer to the channel layer than the charge storage layer.

* The semiconductor device has a unique gate dielectric layer structure with a carbon-containing tunneling layer.
* The tunneling layer is positioned closer to the channel layer than the charge storage layer.
* The stack structure includes an interlayer insulating layer and a gate electrode.
* The channel layer extends in a direction crossing the substrate through the stack structure.

==Potential Applications==
This technology could be applied in the development of advanced semiconductor devices for various electronic applications, including memory storage, logic circuits, and microprocessors.

==Problems Solved==
This innovation addresses the need for improved performance and efficiency in semiconductor devices by optimizing the gate dielectric layer structure for enhanced functionality.

==Benefits==
The benefits of this technology include increased speed, reduced power consumption, and enhanced reliability in semiconductor devices, leading to improved overall performance in electronic systems.

==Commercial Applications==
* Memory storage devices
* Logic circuits
* Microprocessors

==Questions about the Technology==
===What are the potential implications of using a carbon-containing tunneling layer in semiconductor devices?===
The use of a carbon-containing tunneling layer can potentially improve the performance and efficiency of semiconductor devices by enhancing charge transport properties.

===How does the unique gate dielectric layer structure contribute to the overall functionality of the semiconductor device?===
The unique gate dielectric layer structure, including the carbon-containing tunneling layer, helps to optimize the device's operation by facilitating efficient charge transfer and storage.


==Original Abstract Submitted==

A semiconductor device includes a substrate; a stack structure including an interlayer insulating layer and a gate electrode which are alternately stacked on the substrate; a channel layer extending in a direction crossing the substrate through the stack structure; and a gate dielectric layer between the gate electrode and the channel layer, the gate dielectric layer including a tunneling layer, a charge storage layer, and a blocking layer sequentially on the channel layer, wherein the tunneling layer includes a carbon-containing layer including carbon, and the tunneling layer is positioned closer to the channel layer than it is to the charge storage layer.



[[Category:H10B43/35]]
[[Category:H10B41/27]]
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[[Category:CPC_H10B43/35]]