View source for 18235000. THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)

=THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICES=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Kyunghwan Lee of Suwon-si (KR)|Kyunghwan Lee of Suwon-si (KR)]][[Category:Kyunghwan Lee of Suwon-si (KR)]]

[[:Category:Yongseok Kim of Suwon-si (KR)|Yongseok Kim of Suwon-si (KR)]][[Category:Yongseok Kim of Suwon-si (KR)]]

[[:Category:Daewon Ha of Suwon-si (KR)|Daewon Ha of Suwon-si (KR)]][[Category:Daewon Ha of Suwon-si (KR)]]

==THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18235000 titled 'THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICES

==Simplified Explanation==

The three-dimensional ferroelectric memory device described in the abstract includes various components such as a channel, gate insulation pattern, conductive pattern, ferroelectric pattern, gate electrode, and source/drain patterns. Here is a simplified explanation of the patent application:

* The device has a vertical channel on a substrate with a gate insulation pattern and conductive pattern surrounding it.
* A ferroelectric pattern contacts the conductive pattern, while a gate electrode contacts the ferroelectric pattern.
* First and second source/drain patterns contact the lower and upper surfaces of the channel, respectively.

== Potential Applications ==
This technology could be used in:
* High-density memory storage devices
* Non-volatile memory applications

== Problems Solved ==
This technology addresses:
* Data retention issues in memory devices
* Increasing demand for faster and more efficient memory solutions

== Benefits ==
The benefits of this technology include:
* Improved data retention capabilities
* Enhanced memory performance
* Increased memory density

== Potential Commercial Applications ==
The potential commercial applications of this technology could be in:
* Consumer electronics
* Data storage devices

== Possible Prior Art ==
One possible prior art for this technology could be:
* Three-dimensional memory devices with similar structures and components

=== Unanswered Questions ===

=== How does this technology compare to existing memory devices in terms of speed and efficiency? ===
This technology offers faster and more efficient memory solutions compared to traditional memory devices. It addresses data retention issues and provides increased memory density.

=== What are the potential challenges in scaling up this technology for mass production? ===
Scaling up this technology for mass production may face challenges related to manufacturing processes, cost-effectiveness, and integration with existing memory technologies. Further research and development may be needed to overcome these challenges.


==Original Abstract Submitted==

A three-dimensional ferroelectric memory device includes a channel on a substrate and extending in a vertical direction substantially perpendicular to an upper surface of the substrate, a gate insulation pattern and a conductive pattern stacked on and surrounding a sidewall of the channel in a horizontal direction substantially parallel to the upper surface of the substrate, a ferroelectric pattern contacting a portion of an outer sidewall of the conductive pattern, a gate electrode contacting the ferroelectric pattern, and first and second source/drain patterns contacting lower and upper surfaces, respectively, of the channel.



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