View source for 18233420. CORRECTIVE PROGRAM VERIFY OPERATION WITH IMPROVED READ WINDOW BUDGET RETENTION simplified abstract (Micron Technology, Inc.)

=CORRECTIVE PROGRAM VERIFY OPERATION WITH IMPROVED READ WINDOW BUDGET RETENTION=


==Organization Name==

[[:Category:Micron Technology, Inc.|Micron Technology, Inc.]]


[[Category:Micron Technology, Inc.]]

==Inventor(s)==

[[:Category:Ching-Huang Lu of Fremont CA (US)|Ching-Huang Lu of Fremont CA (US)]][[Category:Ching-Huang Lu of Fremont CA (US)]]

[[:Category:Hong-Yan Chen of San Jose CA (US)|Hong-Yan Chen of San Jose CA (US)]][[Category:Hong-Yan Chen of San Jose CA (US)]]

[[:Category:Yingda Dong of Los Altos CA (US)|Yingda Dong of Los Altos CA (US)]][[Category:Yingda Dong of Los Altos CA (US)]]

==CORRECTIVE PROGRAM VERIFY OPERATION WITH IMPROVED READ WINDOW BUDGET RETENTION - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18233420 titled 'CORRECTIVE PROGRAM VERIFY OPERATION WITH IMPROVED READ WINDOW BUDGET RETENTION

==Simplified Explanation==

The abstract describes a program operation for programming memory cells in a memory device and verifying the programming using different voltage levels.

* Program operation to program target memory cells to a target programming level on a target wordline.
* Program verify operation to apply a program verify voltage level to the target wordline to verify programming.
* Identification of pass through read voltage level associated with the target wordline.
* Application of pass through voltage level to first or second wordline during program verify operation, where pass through read voltage level is reduced by an offset value.

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### Potential Applications
* Memory devices
* Semiconductor industry
* Data storage technology

### Problems Solved
* Ensuring accurate programming of memory cells
* Improving reliability of memory devices
* Enhancing data retention capabilities

### Benefits
* Increased efficiency in programming operations
* Enhanced performance of memory devices
* Improved data integrity and reliability


==Original Abstract Submitted==

A program operation is initiated to program a set of target memory cells of a target wordline of a memory device to a target programming level. During a program verify operation of the program operation, a program verify voltage level is caused to be applied to the target wordline to verify programming of the set of target memory cells. A pass through read voltage level associated with the target wordline is identified. During the program verify operation, a pass through voltage level is caused to be applied to at least one of a first wordline or a second wordline, wherein the pass through read voltage level is the read voltage level reduced by an offset value.



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[[Category:G11C16/08]]
[[Category:G11C16/10]]