View source for 18232992. APPARATUS FOR PROCESSING PLASMA AND METHOD OF PROCESSING PLASMA AND MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

=APPARATUS FOR PROCESSING PLASMA AND METHOD OF PROCESSING PLASMA AND MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Hyunbae Kim of Suwon-si (KR)|Hyunbae Kim of Suwon-si (KR)]][[Category:Hyunbae Kim of Suwon-si (KR)]]

[[:Category:Jihwan Kim of Suwon-si (KR)|Jihwan Kim of Suwon-si (KR)]][[Category:Jihwan Kim of Suwon-si (KR)]]

[[:Category:Sangki Nam of Suwon-si (KR)|Sangki Nam of Suwon-si (KR)]][[Category:Sangki Nam of Suwon-si (KR)]]

[[:Category:Daeun Son of Suwon-si (KR)|Daeun Son of Suwon-si (KR)]][[Category:Daeun Son of Suwon-si (KR)]]

[[:Category:Seungbo Shim of Suwon-si (KR)|Seungbo Shim of Suwon-si (KR)]][[Category:Seungbo Shim of Suwon-si (KR)]]

[[:Category:Juho Lee of Suwon-si (KR)|Juho Lee of Suwon-si (KR)]][[Category:Juho Lee of Suwon-si (KR)]]

[[:Category:Hyunjae Lee of Suwon-si (KR)|Hyunjae Lee of Suwon-si (KR)]][[Category:Hyunjae Lee of Suwon-si (KR)]]

[[:Category:Hyunhak Jeong of Suwon-si (KR)|Hyunhak Jeong of Suwon-si (KR)]][[Category:Hyunhak Jeong of Suwon-si (KR)]]

==APPARATUS FOR PROCESSING PLASMA AND METHOD OF PROCESSING PLASMA AND MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18232992 titled 'APPARATUS FOR PROCESSING PLASMA AND METHOD OF PROCESSING PLASMA AND MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

==Simplified Explanation==

The abstract describes a method of manufacturing a semiconductor device using plasma ions generated by two power generators with different waveforms.

* The method involves placing a wafer in a plasma chamber with two power generators: one for generating plasma ions and the other for accelerating them towards the wafer.
* The first power generator produces a radio frequency (RF) signal with a sinusoidal waveform, while the second power generator generates a direct current (DC) bias signal with a non-sinusoidal waveform.
* The RF signal and DC bias signal are offset from each other to perform a plasma process on a layer on the wafer.

== Potential Applications ==
This technology can be applied in the manufacturing of various semiconductor devices, such as integrated circuits, memory chips, and sensors.

== Problems Solved ==
This method helps in improving the efficiency and precision of plasma processes on semiconductor wafers, leading to better quality and performance of the final devices.

== Benefits ==
The use of two power generators with different waveforms allows for more control and customization of the plasma process, resulting in enhanced device characteristics and overall performance.

== Potential Commercial Applications ==
This technology can be utilized in semiconductor fabrication facilities to produce high-quality and reliable semiconductor devices for a wide range of electronic applications.

== Possible Prior Art ==
One possible prior art could be the use of single power generators with fixed waveforms for plasma processes in semiconductor manufacturing.

=== Unanswered Questions ===

=== How does this method compare to traditional plasma processing techniques in terms of efficiency and accuracy? ===
This article does not provide a direct comparison between this method and traditional plasma processing techniques. Further research or experimentation may be needed to determine the specific advantages of this new approach.

=== What are the potential limitations or challenges in implementing this technology on an industrial scale? ===
The article does not address any potential limitations or challenges that may arise when implementing this technology on an industrial scale. Additional studies or pilot projects may be required to assess the scalability and practicality of this method in large-scale semiconductor manufacturing operations.


==Original Abstract Submitted==

A method of manufacturing a semiconductor device includes placing a wafer in a plasma chamber, the chamber including a first power generator configured to generate plasma ions in the chamber, and a second power generator configured to accelerate the plasma ions toward the wafer, generating a radio frequency (RF) signal having a repeated periodic sinusoidal waveform in an on state and a steady off state by the first power generator, and generating a direct current (DC) bias signal having a repeated periodic non-sinusoidal waveform in an on state and a steady off state by the second power generator. The RF signal and the DC bias signal are offset from each other. The method further includes performing a plasma process on a layer on the wafer, using the RF signal and DC bias signal.



[[Category:H01J37/32]]