View source for 18229290. SEMICONDUCTOR DEVICE INCLUDING ALIGNMENT KEY simplified abstract (Samsung Electronics Co., Ltd.)

=SEMICONDUCTOR DEVICE INCLUDING ALIGNMENT KEY=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Jong-Su Park of Suwon-si (KR)|Jong-Su Park of Suwon-si (KR)]][[Category:Jong-Su Park of Suwon-si (KR)]]

[[:Category:Jaehan Lee of Suwon-si (KR)|Jaehan Lee of Suwon-si (KR)]][[Category:Jaehan Lee of Suwon-si (KR)]]

==SEMICONDUCTOR DEVICE INCLUDING ALIGNMENT KEY - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18229290 titled 'SEMICONDUCTOR DEVICE INCLUDING ALIGNMENT KEY

==Simplified Explanation==

The semiconductor device described in the patent application includes a first peripheral circuit structure and a cell stack structure stacked on top of the first peripheral circuit structure. The cell stack structure consists of electrode layers and inter-electrode insulating layers that are alternately and repeatedly stacked. The first peripheral circuit structure comprises a first substrate, first peripheral transistors, a first peripheral insulating layer covering the first substrate and the transistors, and a first peripheral alignment key on the insulating layer, which overlaps with the cell stack structure.

* The semiconductor device includes a first peripheral circuit structure and a cell stack structure with alternating electrode layers and inter-electrode insulating layers.
* The first peripheral circuit structure consists of a first substrate, first peripheral transistors, a first peripheral insulating layer, and a first peripheral alignment key.
* The first peripheral alignment key overlaps with the cell stack structure.

== Potential Applications ==
The technology described in this patent application could be applied in the following areas:
* Semiconductor manufacturing
* Memory devices
* Integrated circuits

== Problems Solved ==
This technology addresses the following issues:
* Efficient stacking of electrode layers and insulating layers
* Alignment of peripheral circuit structures with cell stack structures

== Benefits ==
The benefits of this technology include:
* Improved performance of semiconductor devices
* Enhanced reliability and durability
* Simplified manufacturing processes

== Potential Commercial Applications ==
The potential commercial applications of this technology could include:
* Memory chip manufacturing
* Consumer electronics
* Telecommunications industry

== Possible Prior Art ==
One possible prior art for this technology could be the use of similar alignment keys in semiconductor devices to ensure proper alignment between different layers and structures.

== Unanswered Questions ==

=== How does this technology impact the overall efficiency of semiconductor devices? ===
This technology could potentially improve the efficiency of semiconductor devices by optimizing the alignment and stacking of different layers, but the specific impact on efficiency is not detailed in the abstract.

=== What are the specific manufacturing challenges that this technology helps to overcome? ===
While the abstract mentions improved alignment and stacking, it does not delve into the specific manufacturing challenges that this technology addresses.


==Original Abstract Submitted==

A semiconductor device includes a first peripheral circuit structure and a cell stack structure disposed on the first peripheral circuit structure and including electrode layers and inter-electrode insulating layers that are alternately and repeatedly stacked, the first peripheral circuit structure includes a first substrate, first peripheral transistors disposed on the first substrate, a first peripheral insulating layer covering the first substrate and the first peripheral transistors, and a first peripheral alignment key on the first peripheral insulating layer, and the first peripheral alignment key overlaps the cell stack structure.



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