View source for 18227467. SEMICONDUCTOR MANUFACTURING APPARATUS, GAS SUPPLYING METHOD USING THE SAME, AND SEMICONDUCTOR MANUFACTURING METHOD USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

=SEMICONDUCTOR MANUFACTURING APPARATUS, GAS SUPPLYING METHOD USING THE SAME, AND SEMICONDUCTOR MANUFACTURING METHOD USING THE SAME=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Chan Kyu Lim of Suwon-si (KR)|Chan Kyu Lim of Suwon-si (KR)]][[Category:Chan Kyu Lim of Suwon-si (KR)]]

[[:Category:Yoonbon Koo of Suwon-si (KR)|Yoonbon Koo of Suwon-si (KR)]][[Category:Yoonbon Koo of Suwon-si (KR)]]

[[:Category:Hanhim Kang of Suwon-si (KR)|Hanhim Kang of Suwon-si (KR)]][[Category:Hanhim Kang of Suwon-si (KR)]]

[[:Category:Suji Gim of Suwon-si (KR)|Suji Gim of Suwon-si (KR)]][[Category:Suji Gim of Suwon-si (KR)]]

[[:Category:Jongkoo Lim of Suwon-si (KR)|Jongkoo Lim of Suwon-si (KR)]][[Category:Jongkoo Lim of Suwon-si (KR)]]

==SEMICONDUCTOR MANUFACTURING APPARATUS, GAS SUPPLYING METHOD USING THE SAME, AND SEMICONDUCTOR MANUFACTURING METHOD USING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18227467 titled 'SEMICONDUCTOR MANUFACTURING APPARATUS, GAS SUPPLYING METHOD USING THE SAME, AND SEMICONDUCTOR MANUFACTURING METHOD USING THE SAME

==Simplified Explanation==

The present disclosure provides methods and apparatuses for supplying a process gas in a semiconductor manufacturing process. In some embodiments, the method includes heating, using one or more heating devices of the semiconductor manufacturing apparatus, a gas tank and a gas line of the semiconductor manufacturing apparatus. The method further includes filling, through the gas line, the gas tank with a reaction gas. The method further includes changing, using the one or more heating devices, a temperature of the reaction gas in the gas tank. The method further includes supplying the reaction gas from the gas tank to a process chamber of the semiconductor manufacturing apparatus. The changing of the temperature of the reaction gas includes decomposing a portion of the reaction gas into one or more materials different from the reaction gas.

* Heating devices are used to heat a gas tank and gas line in a semiconductor manufacturing apparatus.
* The method involves filling the gas tank with a reaction gas through the gas line.
* The temperature of the reaction gas in the gas tank is changed using the heating devices.
* The reaction gas is supplied from the gas tank to a process chamber of the semiconductor manufacturing apparatus.

== Potential Applications ==
This technology can be applied in semiconductor manufacturing processes, specifically in supplying process gases to process chambers.

== Problems Solved ==
This technology solves the problem of efficiently supplying and controlling the temperature of reaction gases in semiconductor manufacturing processes.

== Benefits ==
The benefits of this technology include improved process control, enhanced efficiency in gas supply, and potentially higher quality semiconductor products.

== Potential Commercial Applications ==
One potential commercial application of this technology is in semiconductor fabrication facilities, where precise control of process gases is crucial for manufacturing high-quality semiconductor devices.

== Possible Prior Art ==
One possible prior art for this technology could be systems or methods used in semiconductor manufacturing processes for supplying and controlling process gases. 

=== Unanswered Questions ===

=== How does this technology compare to existing gas supply systems in semiconductor manufacturing processes? ===
This article does not provide a direct comparison to existing gas supply systems in semiconductor manufacturing processes. 

=== What are the specific materials that can be decomposed from the reaction gas in this process? ===
The article does not specify the exact materials that can be decomposed from the reaction gas in this process.


==Original Abstract Submitted==

The present disclosure provides methods and apparatuses for supplying a process gas in a semiconductor manufacturing process. In some embodiments, the method includes heating, using one or more heating devices of the semiconductor manufacturing apparatus, a gas tank and a gas line of the semiconductor manufacturing apparatus. The method further includes filling, through the gas line, the gas tank with a reaction gas. The method further includes changing, using the one or more heating devices, a temperature of the reaction gas in the gas tank. The method further includes supplying the reaction gas from the gas tank to a process chamber of the semiconductor manufacturing apparatus. The changing of the temperature of the reaction gas includes decomposing a portion of the reaction gas into one or more materials different from the reaction gas.



[[Category:C23C16/455]]
[[Category:C23C16/52]]
[[Category:H10B41/27]]
[[Category:H10B43/27]]