View source for 18226037. SEMICONDUCTOR DEVICE INCLUDING COMMON BODY BIAS REGION simplified abstract (Samsung Electronics Co., Ltd.)

=SEMICONDUCTOR DEVICE INCLUDING COMMON BODY BIAS REGION=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Changyeon Yu of Suwon-si (KR)|Changyeon Yu of Suwon-si (KR)]][[Category:Changyeon Yu of Suwon-si (KR)]]

[[:Category:Pansuk Kwak of Suwon-si (KR)|Pansuk Kwak of Suwon-si (KR)]][[Category:Pansuk Kwak of Suwon-si (KR)]]

==SEMICONDUCTOR DEVICE INCLUDING COMMON BODY BIAS REGION - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18226037 titled 'SEMICONDUCTOR DEVICE INCLUDING COMMON BODY BIAS REGION

==Simplified Explanation==

The semiconductor device described in the abstract includes a substrate, a P-well region, a first N-type metal oxide semiconductor (NMOS) transistor in the P-well region, a second NMOS transistor on the substrate, and a common body bias region between the two transistors, contacting both the P-well region and the substrate.

* The semiconductor device consists of a substrate, P-well region, and two NMOS transistors with a common body bias region.
* The first NMOS transistor is located in the P-well region, while the second NMOS transistor is situated on the substrate.
* The common body bias region is positioned between the two transistors, connecting the P-well region and the substrate.

== Potential Applications ==
The technology described in this patent application could be applied in:
* Integrated circuits
* Power management systems
* Battery-operated devices

== Problems Solved ==
This technology helps in:
* Improving performance and efficiency of semiconductor devices
* Enhancing power management capabilities
* Reducing power consumption

== Benefits ==
The benefits of this technology include:
* Enhanced overall performance of semiconductor devices
* Improved power efficiency
* Extended battery life in portable devices

== Potential Commercial Applications ==
The potential commercial applications of this technology could be in:
* Consumer electronics
* Automotive industry
* Telecommunications sector

== Possible Prior Art ==
One possible prior art for this technology could be:
* Previous patents related to body biasing techniques in semiconductor devices

== Unanswered Questions ==
=== How does this technology compare to existing body biasing techniques in semiconductor devices? ===
This article does not provide a direct comparison to existing body biasing techniques in semiconductor devices.

=== What specific improvements in performance can be expected from implementing this technology? ===
The article does not detail specific performance improvements resulting from the implementation of this technology.


==Original Abstract Submitted==

A semiconductor device includes a substrate, a P-well region, a first N-type metal oxide semiconductor (NMOS) transistor provided in the P-well region, a second NMOS transistor provided on the substrate, and a common body bias region provided between the first NMOS transistor and the second NMOS transistor and contacting both the P-well region and the substrate.



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