View source for 18222897. INTEGRATED SOLUTION WITH LOW TEMPERATURE DRY DEVELOP FOR EUV PHOTORESIST simplified abstract (Applied Materials, Inc.)

=INTEGRATED SOLUTION WITH LOW TEMPERATURE DRY DEVELOP FOR EUV PHOTORESIST=


==Organization Name==

[[:Category:Applied Materials, Inc.|Applied Materials, Inc.]]


[[Category:Applied Materials, Inc.]]

==Inventor(s)==

[[:Category:Tzu Shun Yang of Milpitas CA (US)|Tzu Shun Yang of Milpitas CA (US)]][[Category:Tzu Shun Yang of Milpitas CA (US)]]

[[:Category:Zhenxing Han of Sunnyvale CA (US)|Zhenxing Han of Sunnyvale CA (US)]][[Category:Zhenxing Han of Sunnyvale CA (US)]]

[[:Category:Madhur Sachan of Belmont CA (US)|Madhur Sachan of Belmont CA (US)]][[Category:Madhur Sachan of Belmont CA (US)]]

[[:Category:Lequn Liu of San Jose CA (US)|Lequn Liu of San Jose CA (US)]][[Category:Lequn Liu of San Jose CA (US)]]

[[:Category:Nasrin Kazem of Santa Clara CA (US)|Nasrin Kazem of Santa Clara CA (US)]][[Category:Nasrin Kazem of Santa Clara CA (US)]]

[[:Category:Lakmal Charidu Kalutarage of San Jose CA (US)|Lakmal Charidu Kalutarage of San Jose CA (US)]][[Category:Lakmal Charidu Kalutarage of San Jose CA (US)]]

[[:Category:Mark Joseph Saly of Milpitas CA (US)|Mark Joseph Saly of Milpitas CA (US)]][[Category:Mark Joseph Saly of Milpitas CA (US)]]

==INTEGRATED SOLUTION WITH LOW TEMPERATURE DRY DEVELOP FOR EUV PHOTORESIST - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18222897 titled 'INTEGRATED SOLUTION WITH LOW TEMPERATURE DRY DEVELOP FOR EUV PHOTORESIST

==Simplified Explanation==

The abstract describes a method for developing a photopatterned metal oxo photoresist, involving pre-treatment, thermal dry development, and post-treatment processes.

* The method includes pre-treating the photopatterned metal oxo photoresist with a pre-treatment process.
* The photopatterned metal oxo photoresist is then developed using a thermal dry develop process to selectively remove a portion of the resist and form a resist mask.
* The thermal dry develop process consists of a first sub-operation and a second sub-operation that differs from the first.
* The process concludes with post-treating the resist mask with a post-treatment process.

== Potential Applications ==
This technology could be applied in the semiconductor industry for photolithography processes.

== Problems Solved ==
This method solves the problem of selectively removing portions of a photopatterned metal oxo photoresist to form a resist mask.

== Benefits ==
The benefits of this technology include improved precision and control in developing photopatterned metal oxo photoresists.

== Potential Commercial Applications ==
A potential commercial application of this technology could be in the production of advanced electronic devices.

== Possible Prior Art ==
One possible prior art could be the use of traditional wet development processes for developing photoresists.

=== Unanswered Questions ===

=== How does this method compare to traditional wet development processes for photoresists? ===
This article does not provide a direct comparison between the described method and traditional wet development processes.

=== What specific types of metal oxo photoresists are most suitable for this method? ===
The article does not specify the types of metal oxo photoresists that are most compatible with this method.


==Original Abstract Submitted==

Embodiments disclosed herein may include a method for developing a photopatterned metal oxo photoresist. In an embodiment, the method may include pre-treating the photopatterned metal oxo photoresist with a pre-treatment process, developing the photopatterned metal oxo photoresist with a thermal dry develop process to selectively remove a portion of the photopatterned metal oxo photoresist and form a resist mask. In an embodiment, the thermal dry develop process includes a first sub-operation, and a second sub-operation that is different than the first sub-operation. In an embodiment, the process further includes post-treating the resist mask with a post-treatment process.



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