View source for 18220879. DEFECT EVALUATION METHOD FOR EVALUATING DEFECT DUE TO ELECTROSTATIC DISCHARGE AND DEFECT EVALUATION DEVICE PERFORMING THE SAME simplified abstract (Samsung Display Co., LTD.)

=DEFECT EVALUATION METHOD FOR EVALUATING DEFECT DUE TO ELECTROSTATIC DISCHARGE AND DEFECT EVALUATION DEVICE PERFORMING THE SAME=


==Organization Name==

[[:Category:Samsung Display Co., LTD.|Samsung Display Co., LTD.]]


[[Category:Samsung Display Co., LTD.]]

==Inventor(s)==

[[:Category:YOUNG JE Cho of Yongin-si (KR)|YOUNG JE Cho of Yongin-si (KR)]][[Category:YOUNG JE Cho of Yongin-si (KR)]]

[[:Category:SANG DO Yu of Yongin-si (KR)|SANG DO Yu of Yongin-si (KR)]][[Category:SANG DO Yu of Yongin-si (KR)]]

==DEFECT EVALUATION METHOD FOR EVALUATING DEFECT DUE TO ELECTROSTATIC DISCHARGE AND DEFECT EVALUATION DEVICE PERFORMING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18220879 titled 'DEFECT EVALUATION METHOD FOR EVALUATING DEFECT DUE TO ELECTROSTATIC DISCHARGE AND DEFECT EVALUATION DEVICE PERFORMING THE SAME

==Simplified Explanation==

The patent application describes a defect evaluation method for assessing defects caused by electrostatic discharge in a test object. The method involves obtaining a charged map of the lower part of the test object, preparing a test pattern to simulate the charged map, contacting the test object to the test pattern, and applying a voltage to the test pattern. This allows for the simulation and evaluation of potential defects that may occur during the manufacturing process of the test object, enabling adjustments to be made to prevent such defects.

* Obtaining a charged map of the lower part of the test object
* Preparing a test pattern to simulate the charged map
* Contacting the test object to the test pattern
* Applying a voltage to the test pattern

== Potential Applications ==
This technology could be applied in various industries where electrostatic discharge poses a risk to the manufacturing process of electronic components or devices.

== Problems Solved ==
This technology helps in identifying and preventing defects caused by electrostatic discharge during the manufacturing process, leading to improved product quality and reliability.

== Benefits ==
- Early detection and prevention of defects
- Enhanced product quality and reliability
- Cost savings by avoiding rework or product recalls

== Potential Commercial Applications ==
"Defect Evaluation Method for Electrostatic Discharge" could find applications in industries such as semiconductor manufacturing, electronics assembly, and consumer electronics production.

== Possible Prior Art ==
One possible prior art could be methods for testing and evaluating defects in electronic components caused by various environmental factors, including electrostatic discharge.

=== What are the specific industries that could benefit from this technology? ===

Industries such as semiconductor manufacturing, electronics assembly, and consumer electronics production could benefit from this technology by improving product quality and reliability through early defect detection and prevention.

=== How does this technology compare to existing methods for evaluating defects in electronic components? ===

This technology offers a proactive approach to simulating and evaluating defects caused by electrostatic discharge, allowing for adjustments to be made during the manufacturing process to prevent such defects. Existing methods may focus on post-production testing rather than preemptive defect evaluation.


==Original Abstract Submitted==

A defect evaluation method for evaluating a defect due to electrostatic discharge includes obtaining a charged map of a lower part of a test object, preparing a test pattern simulating the charged map of the lower part of the test object, contacting the test object to the test pattern, and applying a voltage to the test pattern. Accordingly, to simulate and evaluate the defect that may occur during a manufacturing process of the test object in advance. In addition, using a result obtained by the simulation and the evaluation, an arrangement of a portion vulnerable to the defect of a structure in the test object may be changed.



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