View source for 18218926. TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS simplified abstract (International Business Machines Corporation)

=TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS=


==Organization Name==

[[:Category:International Business Machines Corporation|International Business Machines Corporation]]


[[Category:International Business Machines Corporation]]

==Inventor(s)==

[[:Category:Jaewoo Jeong of Los Altos CA (US)|Jaewoo Jeong of Los Altos CA (US)]][[Category:Jaewoo Jeong of Los Altos CA (US)]]

[[:Category:Tiar Ikhtiar of San Jose CA (US)|Tiar Ikhtiar of San Jose CA (US)]][[Category:Tiar Ikhtiar of San Jose CA (US)]]

[[:Category:Panagiotis Charilaos Filippou of Fremont CA (US)|Panagiotis Charilaos Filippou of Fremont CA (US)]][[Category:Panagiotis Charilaos Filippou of Fremont CA (US)]]

[[:Category:Chirag Garg of San Jose CA (US)|Chirag Garg of San Jose CA (US)]][[Category:Chirag Garg of San Jose CA (US)]]

[[:Category:Mahesh Govind Samant of San Jose CA (US)|Mahesh Govind Samant of San Jose CA (US)]][[Category:Mahesh Govind Samant of San Jose CA (US)]]

==TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18218926 titled 'TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS

The magnetic memory device described in the patent application consists of several layers including a seed layer, a chemical templating layer, and a first magnetic layer. The seed layer is made of ScN, MnN, or MgO oriented in the (001) direction. The chemical templating layer contains a binary alloy with a CuAu prototype structure or a BiF prototype structure. The first magnetic layer is a Heusler compound with perpendicular magnetic anisotropy.

* Seed layer made of ScN, MnN, or MgO oriented in the (001) direction
* Chemical templating layer with a binary alloy having CuAu or BiF prototype structure
* First magnetic layer made of a Heusler compound with perpendicular magnetic anisotropy

Potential Applications:
- Data storage devices
- Magnetic sensors
- Magnetic random-access memory (MRAM)

Problems Solved:
- Enhanced magnetic memory performance
- Improved data storage capabilities

Benefits:
- Increased data storage density
- Faster data access speeds
- More reliable magnetic memory devices

Commercial Applications:
Title: Advanced Magnetic Memory Devices for Next-Generation Data Storage
This technology can be used in various commercial applications such as:
- Consumer electronics
- Data centers
- Aerospace industry

Questions about Magnetic Memory Devices:
1. How does the orientation of the seed layer impact the performance of the magnetic memory device?
The orientation of the seed layer plays a crucial role in determining the magnetic properties and overall performance of the device. By aligning the crystals in a specific direction, the magnetic memory device can exhibit enhanced stability and efficiency.

2. What are the advantages of using a Heusler compound in the first magnetic layer?
Heusler compounds are known for their unique magnetic properties, including perpendicular magnetic anisotropy, which is essential for improving the data storage capabilities of the device. This allows for more efficient data writing and reading processes.


==Original Abstract Submitted==

A magnetic memory device includes a substrate, a seed layer above the substrate, a chemical templating layer above the seed layer, and a first magnetic layer above the chemical templating layer. The seed layer includes ScN, MnN, or MgO substantially oriented in (001) direction. The chemical templating layer includes a binary alloy having a CuAu prototype structure or a BiFprototype structure. The first magnetic layer includes a Heusler compound having perpendicular magnetic anisotropy.



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