View source for 18218920. NITRIDE SEED LAYER WITH HIGH THERMAL STABILITY FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS simplified abstract (International Business Machines Corporation)

=NITRIDE SEED LAYER WITH HIGH THERMAL STABILITY FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS=


==Organization Name==

[[:Category:International Business Machines Corporation|International Business Machines Corporation]]


[[Category:International Business Machines Corporation]]

==Inventor(s)==

[[:Category:Jaewoo Jeong of San Jose CA (US)|Jaewoo Jeong of San Jose CA (US)]][[Category:Jaewoo Jeong of San Jose CA (US)]]

[[:Category:Tiar Ikhtiar of San Jose CA (US)|Tiar Ikhtiar of San Jose CA (US)]][[Category:Tiar Ikhtiar of San Jose CA (US)]]

[[:Category:Panagiotis Charilaos Filippou of Fremont CA (US)|Panagiotis Charilaos Filippou of Fremont CA (US)]][[Category:Panagiotis Charilaos Filippou of Fremont CA (US)]]

[[:Category:Chirag Garg of San Jose CA (US)|Chirag Garg of San Jose CA (US)]][[Category:Chirag Garg of San Jose CA (US)]]

[[:Category:See-Hun Yang of Morgan Hill CA (US)|See-Hun Yang of Morgan Hill CA (US)]][[Category:See-Hun Yang of Morgan Hill CA (US)]]

[[:Category:Mahesh Govind Samant of San Jose CA (US)|Mahesh Govind Samant of San Jose CA (US)]][[Category:Mahesh Govind Samant of San Jose CA (US)]]

==NITRIDE SEED LAYER WITH HIGH THERMAL STABILITY FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18218920 titled 'NITRIDE SEED LAYER WITH HIGH THERMAL STABILITY FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS

The patent application describes a magnetic memory device with a unique structure to enhance performance.

* The device includes a substrate, a thermally stable nitride seed layer oriented in a (001) direction, a chemical templating layer, and a magnetic layer.
* The chemical templating layer contains a binary alloy with a CsCl prototype structure.
* The magnetic layer consists of a Heusler compound with perpendicular magnetic anisotropy (PMA).

Potential Applications:
* This technology can be used in data storage devices such as hard drives and solid-state drives.
* It may also find applications in magnetic sensors and other magnetic memory systems.

Problems Solved:
* The device addresses the need for improved magnetic memory performance and stability.
* It offers a solution for enhancing data storage capacity and speed.

Benefits:
* Increased data storage density and efficiency.
* Enhanced magnetic memory device performance and reliability.

Commercial Applications:
* This technology could revolutionize the data storage industry by providing more advanced and reliable magnetic memory solutions.

Questions about Magnetic Memory Devices:
1. How does the CsCl prototype structure in the chemical templating layer contribute to the device's performance?
2. What advantages does perpendicular magnetic anisotropy (PMA) offer in magnetic memory devices?


==Original Abstract Submitted==

A magnetic memory device includes a substrate, a thermally stable nitride seed layer substantially oriented in a (001) direction above the substrate, a chemical templating layer above the thermally stable nitride seed layer, and a magnetic layer above the chemical templating layer. The chemical templating layer includes a binary alloy having a CsCl prototype structure, and the magnetic layer includes a Heusler compound having perpendicular magnetic anisotropy (PMA).



[[Category:H10N50/80]]
[[Category:H01F10/32]]
[[Category:H10B61/00]]
[[Category:H10N50/01]]
[[Category:H10N50/20]]
[[Category:H10N50/85]]
[[Category:CPC_H10N50/80]]