View source for 18216142. EUV LIGHT UNIFORMITY CONTROL APPARATUS, EUV EXPOSURE EQUIPMENT INCLUDING THE SAME, AND METHOD OF CONTROLLING EUV LIGHT UNIFORMITY BY USING THE CONTROL APPARATUS simplified abstract (Samsung Electronics Co., Ltd.)

=EUV LIGHT UNIFORMITY CONTROL APPARATUS, EUV EXPOSURE EQUIPMENT INCLUDING THE SAME, AND METHOD OF CONTROLLING EUV LIGHT UNIFORMITY BY USING THE CONTROL APPARATUS=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:EUNHEE Jeang of SUWON-SI (KR)|EUNHEE Jeang of SUWON-SI (KR)]][[Category:EUNHEE Jeang of SUWON-SI (KR)]]

[[:Category:JEONGGIL Kim of SUWON-SI (KR)|JEONGGIL Kim of SUWON-SI (KR)]][[Category:JEONGGIL Kim of SUWON-SI (KR)]]

==EUV LIGHT UNIFORMITY CONTROL APPARATUS, EUV EXPOSURE EQUIPMENT INCLUDING THE SAME, AND METHOD OF CONTROLLING EUV LIGHT UNIFORMITY BY USING THE CONTROL APPARATUS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18216142 titled 'EUV LIGHT UNIFORMITY CONTROL APPARATUS, EUV EXPOSURE EQUIPMENT INCLUDING THE SAME, AND METHOD OF CONTROLLING EUV LIGHT UNIFORMITY BY USING THE CONTROL APPARATUS

==Simplified Explanation==

The extreme ultraviolet (EUV) light uniformity control apparatus described in the patent application consists of nano thin-films arranged under a reticle of EUV exposure equipment to control the uniformity of EUV light projected onto a wafer, the exposure target. The apparatus includes thin film mounts to fix the nano thin-films and a thin film control device to adjust the uniformity of the EUV light by controlling the nano thin-films.

* Nano thin-films with band shapes are arranged under the reticle of EUV exposure equipment to control light uniformity.
* Thin film mounts fix the nano thin-films in place, while a thin film control device adjusts the uniformity of the EUV light.
* EUV light passes through the nano thin-films twice, being incident to and reflected from the reticle, before being projected onto the wafer for exposure.

== Potential Applications ==
The technology can be applied in semiconductor manufacturing processes where precise control of EUV light uniformity is crucial for achieving high-quality results.

== Problems Solved ==
The apparatus addresses the challenge of achieving uniform EUV light exposure on wafers, which is essential for producing defect-free semiconductor devices.

== Benefits ==
By using the nano thin-films and the thin film control device, the apparatus can ensure consistent and uniform EUV light exposure, leading to improved semiconductor device quality and yield.

== Potential Commercial Applications ==
"Improving Semiconductor Manufacturing Processes with EUV Light Uniformity Control Technology"

== Possible Prior Art ==
There may be prior art related to EUV light uniformity control devices or methods used in semiconductor manufacturing processes.

=== Unanswered Questions ===

=== How does the apparatus handle variations in EUV light intensity across the reticle? ===
The apparatus may include sensors or feedback mechanisms to adjust the nano thin-films based on variations in EUV light intensity.

=== What is the expected lifespan of the nano thin-films in the apparatus? ===
The durability and longevity of the nano thin-films used in the apparatus may impact its overall effectiveness and cost-effectiveness.


==Original Abstract Submitted==

An extreme ultraviolet (EUV) light uniformity control apparatus includes a plurality of nano thin-films each having a band shape extending in a first direction that is a scanning direction of EUV exposure equipment and linearly arranged under a reticle of the EUV exposure equipment in a second direction that is perpendicular to the first direction. The apparatus further includes thin film mounts fixing the nano thin-films on both sides in the first direction, and a thin film control device connected to the thin film mounts and controlling the nano thin-films. EUV light from the EUV exposure equipment is projected onto a wafer that is an exposure target, after passing through the nano thin-films twice by being incident to and reflected from the reticle, and the EUV light projected on the wafer is uniformly adjusted by using the thin film control device.



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