View source for 18203163. METHOD OF CORRECTING OVERLAY, METHOD OF CONTROLLING SEMICONDUCTOR PROCESS, AND SEMICONDUCTOR PROCESSING APPARATUS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=METHOD OF CORRECTING OVERLAY, METHOD OF CONTROLLING SEMICONDUCTOR PROCESS, AND SEMICONDUCTOR PROCESSING APPARATUS=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Jeongjin Lee of Suwon-si (KR)|Jeongjin Lee of Suwon-si (KR)]][[Category:Jeongjin Lee of Suwon-si (KR)]]

[[:Category:Inbeom Yim of Suwon-si (KR)|Inbeom Yim of Suwon-si (KR)]][[Category:Inbeom Yim of Suwon-si (KR)]]

==METHOD OF CORRECTING OVERLAY, METHOD OF CONTROLLING SEMICONDUCTOR PROCESS, AND SEMICONDUCTOR PROCESSING APPARATUS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18203163 titled 'METHOD OF CORRECTING OVERLAY, METHOD OF CONTROLLING SEMICONDUCTOR PROCESS, AND SEMICONDUCTOR PROCESSING APPARATUS

==Simplified Explanation==

The patent application describes a method of correcting overlay errors in the fabrication of patterns on semiconductor devices using extreme ultraviolet light.

* Forming first patterns in first shot areas using extreme ultraviolet light reflected from a first mask to a first layer.
* Forming second patterns in second shot areas using extreme ultraviolet light reflected from a second mask to a second layer.
* Matching pairs of second shot areas to each of the first shot areas.
* Generating first and second correction parameters to correct overlay errors of the second patterns.

== Potential Applications ==
This technology can be applied in the semiconductor industry for the fabrication of advanced integrated circuits with high precision and accuracy.

== Problems Solved ==
This technology addresses the challenge of correcting overlay errors in the manufacturing process of semiconductor devices, ensuring the proper alignment of different layers and patterns.

== Benefits ==
The method improves the overall quality and performance of semiconductor devices by reducing overlay errors and enhancing the accuracy of pattern formation.

== Potential Commercial Applications ==
The technology can be utilized by semiconductor manufacturers to enhance the production of advanced integrated circuits with improved alignment and precision.

== Possible Prior Art ==
One possible prior art in this field is the use of optical lithography techniques for pattern formation in semiconductor devices. However, extreme ultraviolet lithography offers higher resolution and accuracy in pattern fabrication.

=== Unanswered Questions ===

=== How does this method compare to other overlay correction techniques in terms of efficiency and accuracy? ===
This article does not provide a direct comparison with other overlay correction techniques, leaving the reader to wonder about the relative advantages of this method.

=== What are the limitations of using extreme ultraviolet light for pattern formation in semiconductor devices? ===
The article does not discuss any potential limitations or challenges associated with the use of extreme ultraviolet light, leaving room for further exploration of this aspect.


==Original Abstract Submitted==

A method of correcting overlay includes forming first patterns in a plurality of first shot areas by radiating extreme ultraviolet light reflected from a first mask to a first layer; forming second patterns in each of a plurality of second shot areas by radiating extreme ultraviolet light reflected from a second mask to a second layer; matching a pair of second shot areas to each of the first shot areas; and generating first and second correction parameters for correcting an overlay error of the second patterns, wherein the first correction parameter is configured to correct an overlay error of each of the second shot areas based on the first shot area matched to each of the second shot areas, and the second correction parameter is configured to correct an overlay error between the pair of second shot areas matched to each of the first shot areas.



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