View source for 18194468. MEMORY DEVICE RELATED TO A PROGRAM OPERATION, METHOD OF OPERATING THE MEMORY DEVICE, AND STORAGE DEVICE INCLUDING THE MEMORY DEVICE simplified abstract (SK hynix Inc.)

=MEMORY DEVICE RELATED TO A PROGRAM OPERATION, METHOD OF OPERATING THE MEMORY DEVICE, AND STORAGE DEVICE INCLUDING THE MEMORY DEVICE=


==Organization Name==

[[:Category:SK hynix Inc.|SK hynix Inc.]]


[[Category:SK hynix Inc.]]

==Inventor(s)==

[[:Category:Hyung Jin Choi of Icheon-si Gyeonggi-do (KR)|Hyung Jin Choi of Icheon-si Gyeonggi-do (KR)]][[Category:Hyung Jin Choi of Icheon-si Gyeonggi-do (KR)]]

[[:Category:Gwi Han Ko of Icheon-si Gyeonggi-do (KR)|Gwi Han Ko of Icheon-si Gyeonggi-do (KR)]][[Category:Gwi Han Ko of Icheon-si Gyeonggi-do (KR)]]

[[:Category:Chan Sik Park of Icheon-si Gyeonggi-do (KR)|Chan Sik Park of Icheon-si Gyeonggi-do (KR)]][[Category:Chan Sik Park of Icheon-si Gyeonggi-do (KR)]]

==MEMORY DEVICE RELATED TO A PROGRAM OPERATION, METHOD OF OPERATING THE MEMORY DEVICE, AND STORAGE DEVICE INCLUDING THE MEMORY DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18194468 titled 'MEMORY DEVICE RELATED TO A PROGRAM OPERATION, METHOD OF OPERATING THE MEMORY DEVICE, AND STORAGE DEVICE INCLUDING THE MEMORY DEVICE

==Simplified Explanation==

The memory device described in the abstract is designed to perform program operations on a plurality of memory cells based on received data bits from a memory controller. The method of operating the memory device involves receiving data bits, applying program voltages to memory cells based on the data bits, and continuing to receive data bits while performing program voltage operations.

* Memory device for program operations
* Method involves receiving data bits, applying program voltages, and continuing to receive data bits
* Storage device includes the memory device

== Potential Applications ==
The technology can be used in various memory devices such as flash memory, solid-state drives, and other storage devices that require efficient program operations.

== Problems Solved ==
1. Efficient program operations on memory cells
2. Simultaneous data reception and program voltage application

== Benefits ==
1. Faster data storage operations
2. Improved memory device performance
3. Enhanced data transfer speeds

== Potential Commercial Applications ==
Optimizing program operations in memory devices for faster and more reliable data storage solutions

== Possible Prior Art ==
Prior art may include similar memory devices with program operation capabilities, but the specific method described in this patent application may be novel and innovative.

=== Unanswered Questions ===

=== How does this technology compare to existing memory devices in terms of speed and efficiency? ===
The article does not provide a direct comparison between this technology and existing memory devices. Further research or testing may be needed to determine the performance advantages of this innovation.

=== What are the potential limitations or drawbacks of implementing this technology in memory devices? ===
The article does not address any potential limitations or drawbacks of this technology. Additional analysis or experimentation may be required to identify any challenges associated with integrating this innovation into memory devices.


==Original Abstract Submitted==

Provided herein is a memory device for performing a program operation, a method of operating the memory device, and a storage device having the memory device. The method of operating a memory device includes receiving a first data bit among a plurality of data bits to be stored in each of a plurality of memory cells from a memory controller, performing a program voltage apply operation on the plurality of memory cells based on the first data bit, and receiving a second data bit among the plurality of data bits from the memory controller while performing the program voltage apply operation.



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