View source for 18180210. REFLECTIVE MASK AND METHOD OF DESIGNING ANTI-REFLECTION PATTERN OF THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=REFLECTIVE MASK AND METHOD OF DESIGNING ANTI-REFLECTION PATTERN OF THE SAME=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Hyungjong Bae of Suwon-si (KR)|Hyungjong Bae of Suwon-si (KR)]][[Category:Hyungjong Bae of Suwon-si (KR)]]

[[:Category:Hyun Jung Hwang of Suwon-si (KR)|Hyun Jung Hwang of Suwon-si (KR)]][[Category:Hyun Jung Hwang of Suwon-si (KR)]]

[[:Category:Heebom Kim of Suwon-si (KR)|Heebom Kim of Suwon-si (KR)]][[Category:Heebom Kim of Suwon-si (KR)]]

[[:Category:Seong-Bo Shim of Suwon-si (KR)|Seong-Bo Shim of Suwon-si (KR)]][[Category:Seong-Bo Shim of Suwon-si (KR)]]

[[:Category:Seungyoon Lee of Suwon-si (KR)|Seungyoon Lee of Suwon-si (KR)]][[Category:Seungyoon Lee of Suwon-si (KR)]]

[[:Category:Woo-Yong Jung of Suwon-si (KR)|Woo-Yong Jung of Suwon-si (KR)]][[Category:Woo-Yong Jung of Suwon-si (KR)]]

[[:Category:Chan Hwang of Suwon-si (KR)|Chan Hwang of Suwon-si (KR)]][[Category:Chan Hwang of Suwon-si (KR)]]

==REFLECTIVE MASK AND METHOD OF DESIGNING ANTI-REFLECTION PATTERN OF THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18180210 titled 'REFLECTIVE MASK AND METHOD OF DESIGNING ANTI-REFLECTION PATTERN OF THE SAME

==Simplified Explanation==

The patent application describes a reflective mask used in an EUV exposure process. The mask consists of a substrate, a reflective layer, and an absorption layer. The mask has a main region, an out-of-band region, and an alignment mark region. The alignment mark region includes an alignment mark and an anti-reflection pattern with line-and-space patterns of a predetermined line width.

* The reflective mask is used in an EUV exposure process.
* It includes a substrate, a reflective layer, and an absorption layer.
* The mask has a main region, an out-of-band region, and an alignment mark region.
* The alignment mark region includes an alignment mark and an anti-reflection pattern.
* The anti-reflection pattern has line-and-space patterns with a predetermined line width.

Potential Applications:
* Semiconductor manufacturing
* Lithography processes
* Mask fabrication

Problems Solved:
* Improves alignment accuracy in EUV exposure processes
* Reduces reflection and interference effects
* Enhances the performance of lithography processes

Benefits:
* Higher precision in alignment during EUV exposure
* Improved image quality and resolution in lithography
* Enhanced efficiency and reliability in semiconductor manufacturing


==Original Abstract Submitted==

A reflective mask used in an EUV exposure process includes a mask substrate, a reflective layer on the mask substrate, and an absorption layer on the reflective layer. The reflective mask includes a main region, an out-of-band region surrounding the main region, and an alignment mark region outside a periphery of the out-of-band region. The absorption layer in the alignment mark region includes an alignment mark and an anti-reflection pattern adjacent the alignment mark, and the anti-reflection pattern includes line-and-space patterns having a predetermined line width in the alignment mark region.



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