View source for 18173815. RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH IMPROVED BOTTOM ELECTRODE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

=RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH IMPROVED BOTTOM ELECTRODE=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Co., Ltd.|Taiwan Semiconductor Manufacturing Co., Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Jheng-Hong Jiang of Hsinchu (TW)|Jheng-Hong Jiang of Hsinchu (TW)]][[Category:Jheng-Hong Jiang of Hsinchu (TW)]]

[[:Category:Chung-Liang Cheng of Changhua County (TW)|Chung-Liang Cheng of Changhua County (TW)]][[Category:Chung-Liang Cheng of Changhua County (TW)]]

==RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH IMPROVED BOTTOM ELECTRODE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18173815 titled 'RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH IMPROVED BOTTOM ELECTRODE

==Simplified Explanation==

The abstract describes a resistive random access memory (RRAM) device with a unique structure and configuration.

* The RRAM device includes a bottom electrode via in a first dielectric layer.
* The bottom electrode is connected to the bottom electrode via and protrudes upwardly in a tapered shape.
* A top electrode is located in a second dielectric layer, vertically aligned with the bottom electrode.
* A switching layer between the dielectric layers encloses the bottom electrode, forming a conductive path when a forming voltage is applied.

== Potential Applications ==
The RRAM device can be used in various electronic devices such as smartphones, tablets, and computers for non-volatile memory storage.

== Problems Solved ==
This technology provides a more efficient and reliable memory storage solution compared to traditional methods.

== Benefits ==
The RRAM device offers faster read and write speeds, lower power consumption, and higher data retention capabilities.

== Potential Commercial Applications ==
The RRAM technology can be utilized in the semiconductor industry for the development of next-generation memory devices.

== Possible Prior Art ==
Prior art in resistive memory technology includes studies on memristors and other non-volatile memory devices.

== Unanswered Questions ==
=== How does the RRAM device perform under extreme temperature conditions? ===
The article does not address the device's performance in extreme temperature environments.

=== What is the expected lifespan of the RRAM device compared to other memory technologies? ===
The article does not provide information on the expected lifespan of the RRAM device in comparison to existing memory technologies.


==Original Abstract Submitted==

A resistive random access memory (RRAM) device is provided. The RRAM includes: a bottom electrode via disposed in a first dielectric layer; a bottom electrode electrically connected to the bottom electrode via and protruding upwardly from the bottom electrode via in a vertical direction, wherein the bottom electrode has a tapered shape and includes a base portion extending upwardly from a bottom surface to an interface and a tip portion extending upwardly from the interface to a top surface; a top electrode disposed in a second dielectric layer, the top electrode distanced above and vertically aligned with the bottom electrode; and a switching layer disposed between the first dielectric layer and the second dielectric layer, the switching layer enclosing the bottom electrode, wherein a conductive path between the bottom electrode and the top electrode is formed when a forming voltage is applied.



[[Category:H10N70/00]]
[[Category:H10B63/00]]