View source for 18166391. HYBRID GATE FIELD EFFECT TRANSISTOR, METHOD FOR PREPARING HYBRID GATE FIELD EFFECT TRANSISTOR, AND SWITCH CIRCUIT simplified abstract (Huawei Technologies Co., Ltd.)

=HYBRID GATE FIELD EFFECT TRANSISTOR, METHOD FOR PREPARING HYBRID GATE FIELD EFFECT TRANSISTOR, AND SWITCH CIRCUIT=


==Organization Name==

[[:Category:Huawei Technologies Co., Ltd.|Huawei Technologies Co., Ltd.]]


[[Category:Huawei Technologies Co., Ltd.]]

==Inventor(s)==

[[:Category:Ruihong Luo of Dongguan (CN)|Ruihong Luo of Dongguan (CN)]][[Category:Ruihong Luo of Dongguan (CN)]]

[[:Category:Boning Huang of Dongguan (CN)|Boning Huang of Dongguan (CN)]][[Category:Boning Huang of Dongguan (CN)]]

[[:Category:Hui Sun of Shenzhen (CN)|Hui Sun of Shenzhen (CN)]][[Category:Hui Sun of Shenzhen (CN)]]

[[:Category:Qimeng Jiang of Shenzhen (CN)|Qimeng Jiang of Shenzhen (CN)]][[Category:Qimeng Jiang of Shenzhen (CN)]]

[[:Category:Qilong Bao of Dongguan (CN)|Qilong Bao of Dongguan (CN)]][[Category:Qilong Bao of Dongguan (CN)]]

[[:Category:Zhibin Chen of Dongguan (CN)|Zhibin Chen of Dongguan (CN)]][[Category:Zhibin Chen of Dongguan (CN)]]

==HYBRID GATE FIELD EFFECT TRANSISTOR, METHOD FOR PREPARING HYBRID GATE FIELD EFFECT TRANSISTOR, AND SWITCH CIRCUIT - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18166391 titled 'HYBRID GATE FIELD EFFECT TRANSISTOR, METHOD FOR PREPARING HYBRID GATE FIELD EFFECT TRANSISTOR, AND SWITCH CIRCUIT

==Simplified Explanation==

The abstract describes a patent application for a hybrid gate field effect transistor and a method for preparing it, as well as a switch circuit. Here are the key points:

* The hybrid gate field effect transistor consists of a channel layer, a source, a drain, and a gate structure.
* The gate structure is made up of two materials, a first structural layer and a second structural layer.
* The second structural layer wraps around the first structural layer.
* The first structural layer can be either an N-type gallium nitride layer or an intrinsic gallium nitride layer.
* The second structural layer is a P-type gallium nitride layer.
* A gate metal layer is placed on one side of the gate structure, away from the channel layer, and is in ohmic contact with the first structural layer.

Potential applications of this technology:

* Power electronics
* Wireless communication devices
* High-frequency amplifiers
* Switching circuits

Problems solved by this technology:

* Improved performance and efficiency of field effect transistors
* Enhanced control over the flow of current in electronic devices

Benefits of this technology:

* Higher power handling capabilities
* Lower power consumption
* Improved reliability and durability of electronic devices


==Original Abstract Submitted==

This application provides a hybrid gate field effect transistor, a method for preparing the hybrid gate field effect transistor, and a switch circuit. The hybrid gate field effect transistor includes a channel layer, and a source, a drain, and a gate structure disposed on the channel layer. The gate structure is a hybrid gate structure prepared from two materials. The gate structure includes a first structural layer and a second structural layer. The second structural layer wraps the first structural layer. The first structural layer is an N-type gallium nitride layer or an intrinsic gallium nitride layer; and the second structural layer is a P-type gallium nitride layer. The gate metal layer is disposed on one side of the gate structure facing away from the channel layer, and the gate metal layer is in ohmic contact with the first structural layer.



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