View source for 18164426. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)

=SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:KABUSHIKI KAISHA TOSHIBA|KABUSHIKI KAISHA TOSHIBA]]


[[Category:KABUSHIKI KAISHA TOSHIBA]]

==Inventor(s)==

[[:Category:Ryohei Gejo of Kawasaki Kanagawa (JP)|Ryohei Gejo of Kawasaki Kanagawa (JP)]][[Category:Ryohei Gejo of Kawasaki Kanagawa (JP)]]

==SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18164426 titled 'SEMICONDUCTOR DEVICE

==Simplified Explanation==

The semiconductor device described in the abstract includes a semiconductor layer with various semiconductor regions of different conductive types, as well as a gate electrode facing one of the semiconductor regions.

* Semiconductor layer with first and second faces
* First semiconductor region of first conductive type with varying widths
* Plurality of second semiconductor regions of second conductive type
* Third semiconductor region of second conductive type between first semiconductor region and first face
* Fourth semiconductor region of first conductive type
* Fifth semiconductor region of second conductive type
* Gate electrode facing fourth semiconductor region

== Potential Applications ==
This semiconductor device could be used in various electronic applications such as:
* Power electronics
* Integrated circuits
* Sensors

== Problems Solved ==
This technology helps in:
* Improving semiconductor device performance
* Enhancing device efficiency
* Reducing power consumption

== Benefits ==
The benefits of this technology include:
* Higher speed and performance
* Lower power consumption
* Increased reliability

== Potential Commercial Applications ==
This technology could be applied in various industries such as:
* Electronics manufacturing
* Semiconductor fabrication
* Consumer electronics

== Possible Prior Art ==
One possible prior art for this technology could be:
* Previous semiconductor devices with similar structures and configurations

=== Unanswered Questions ===

=== How does this technology compare to existing semiconductor devices in terms of performance and efficiency? ===
This article does not provide a direct comparison with existing semiconductor devices in terms of performance and efficiency. Further research or testing may be needed to determine the specific advantages of this technology over existing ones.

=== What are the specific manufacturing processes involved in creating this semiconductor device? ===
The article does not detail the specific manufacturing processes involved in creating this semiconductor device. Understanding the manufacturing processes could provide insights into the scalability and cost-effectiveness of implementing this technology.


==Original Abstract Submitted==

A semiconductor device of embodiments includes: a semiconductor layer having a first face and a second face; a first semiconductor region of a first conductive type in the semiconductor layer, in contact with the second face, and including a first portion having a first minimum width, a second portion having a second minimum width smaller than the first minimum width, and a third portion connecting the first portion and the second portion and having a third minimum width smaller than the second minimum width; a plurality of second semiconductor regions of a second conductive type in contact with the second face; a third semiconductor region of the second conductive type between the first semiconductor region and the first face; a fourth semiconductor region of the first conductive type; a fifth semiconductor region of the second conductive type; a gate electrode facing the fourth semiconductor region.



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