View source for 18156543. VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRING simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRING=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Youngjin Cho of Suwon-si (KR)|Youngjin Cho of Suwon-si (KR)]][[Category:Youngjin Cho of Suwon-si (KR)]]

[[:Category:Jungho Yoon of Yongin-si (KR)|Jungho Yoon of Yongin-si (KR)]][[Category:Jungho Yoon of Yongin-si (KR)]]

[[:Category:Seyun Kim of Seoul (KR)|Seyun Kim of Seoul (KR)]][[Category:Seyun Kim of Seoul (KR)]]

[[:Category:Jinhong Kim of Suwon-si (KR)|Jinhong Kim of Suwon-si (KR)]][[Category:Jinhong Kim of Suwon-si (KR)]]

[[:Category:Soichiro Mizusaki of Suwon-si (KR)|Soichiro Mizusaki of Suwon-si (KR)]][[Category:Soichiro Mizusaki of Suwon-si (KR)]]

==VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRING - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18156543 titled 'VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRING

==Simplified Explanation==

The abstract describes a vertical nonvolatile memory device that uses a resistance change material. The device includes a memory cell string with multiple components such as semiconductor layers, gates, insulators, gate insulating layers, and a dielectric film with movable oxygen vacancies.

* The memory cell string of the nonvolatile memory device is made up of various components arranged in a specific manner.
* The device utilizes a resistance change material to store and retrieve data.
* The semiconductor layer extends in one direction and has a first and second surface.
* Gates and insulators are alternately arranged in a direction perpendicular to the semiconductor layer.
* A gate insulating layer is present between the gates and insulators and the semiconductor layer.
* A dielectric film is located on the surface of the semiconductor layer and contains movable oxygen vacancies.

==Potential Applications==
* This technology can be used in various electronic devices that require nonvolatile memory, such as smartphones, tablets, and computers.
* It can also be applied in data storage systems, including solid-state drives (SSDs) and memory cards.

==Problems Solved==
* The vertical nonvolatile memory device provides a more compact and efficient solution for data storage compared to traditional memory devices.
* The use of a resistance change material allows for faster read and write speeds, improving overall performance.
* The arrangement of the components in the memory cell string enhances the reliability and durability of the device.

==Benefits==
* The vertical nonvolatile memory device offers higher storage density, allowing for more data to be stored in a smaller space.
* It provides faster data access and transfer speeds, improving the overall performance of electronic devices.
* The device is more reliable and durable, ensuring data integrity and longevity.


==Original Abstract Submitted==

A vertical nonvolatile memory device including a memory cell string using a resistance change material is disclosed. Each memory cell string of the nonvolatile memory device includes a semiconductor layer extending in a first direction and having a first surface opposite a second surface, a plurality of gates and a plurality of insulators alternately arranged in the first direction and extending in a second direction perpendicular to the first direction, a gate insulating layer extending in the first direction between the plurality of gates and the semiconductor layer and between the plurality of insulators and the semiconductor layer, and a dielectric film extending in the first direction on the surface of the semiconductor layer and having a plurality of movable oxygen vacancies distributed therein.



[[Category:G11C13/00]]
[[Category:G06N3/04]]
[[Category:H10B63/00]]
[[Category:H10N70/00]]