View source for 18149829. SELECTIVE METAL SELECTIVITY IMPROVEMENT WITH RF PULSING simplified abstract (Applied Materials, Inc.)

=SELECTIVE METAL SELECTIVITY IMPROVEMENT WITH RF PULSING=


==Organization Name==

[[:Category:Applied Materials, Inc.|Applied Materials, Inc.]]


[[Category:Applied Materials, Inc.]]

==Inventor(s)==

[[:Category:Yi Xu of San Jose CA (US)|Yi Xu of San Jose CA (US)]][[Category:Yi Xu of San Jose CA (US)]]

[[:Category:Yu Lei of Belmont CA (US)|Yu Lei of Belmont CA (US)]][[Category:Yu Lei of Belmont CA (US)]]

[[:Category:Zhimin Qi of Fremont CA (US)|Zhimin Qi of Fremont CA (US)]][[Category:Zhimin Qi of Fremont CA (US)]]

[[:Category:Aixi Zhang of Sunnyvale CA (US)|Aixi Zhang of Sunnyvale CA (US)]][[Category:Aixi Zhang of Sunnyvale CA (US)]]

[[:Category:Xianyuan Zhao of Santa Clara CA (US)|Xianyuan Zhao of Santa Clara CA (US)]][[Category:Xianyuan Zhao of Santa Clara CA (US)]]

==SELECTIVE METAL SELECTIVITY IMPROVEMENT WITH RF PULSING - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18149829 titled 'SELECTIVE METAL SELECTIVITY IMPROVEMENT WITH RF PULSING

The patent application describes a method for removing metal oxide from a substrate surface using hydrogen plasma and pulses of RF.

* The method is effective in removing metal oxides such as tungsten oxide, molybdenum oxide, or ruthenium oxide from the substrate surface without damaging the dielectric or critical dimensions of the structure.
* The process involves exposing the substrate surface to hydrogen plasma and pulses of RF, which selectively remove the metal oxide from the surface.
* After the metal oxide is removed, a metal fill can be deposited in the trench on the substrate surface.

Potential Applications:
* Semiconductor manufacturing
* Microelectronics industry
* Nanotechnology research

Problems Solved:
* Efficient removal of metal oxide from substrate surfaces
* Selective deposition of metal fills in trenches
* Preservation of dielectric and critical dimensions

Benefits:
* Improved substrate surface quality
* Enhanced performance of electronic devices
* Cost-effective and efficient metal oxide removal process

Commercial Applications:
* Advanced semiconductor fabrication processes
* Production of high-performance electronic components
* Research and development in nanotechnology

Questions about the technology:
1. How does the method of using hydrogen plasma and RF pulses compare to traditional methods of removing metal oxide from substrate surfaces?
   - The method is more precise and selective, minimizing damage to the structure while effectively removing the metal oxide.
2. What are the key factors to consider when depositing a metal fill in the trench after removing the metal oxide?
   - Factors such as material compatibility, deposition techniques, and process control are crucial for successful metal fill deposition.


==Original Abstract Submitted==

Embodiments of the disclosure are directed to methods of removing metal oxide from a substrate surface by exposing the substrate surface to a hydrogen (H) plasma and pulses of RF. In some embodiments, the substrate surface has at least one feature thereon, the at least one feature defining a trench having a top surface, a bottom surface, and two opposed sidewalls. The hydrogen (H) plasma and pulses of RF remove substantially all of the metal oxide, e.g., tungsten oxide (WOx), molybdenum oxide (MoOx), or ruthenium oxide (RuOx), from the substrate surface, without damaging the dielectric and/or critical dimension (CD)/profile of the structure. A metal fill can then be selectively deposited in the trench.



[[Category:H01L21/768]]
[[Category:C23C16/04]]
[[Category:C23C16/40]]
[[Category:H01J37/32]]
[[Category:H01L23/532]]
[[Category:CPC_H01L21/76877]]