View source for 18146988. FORMATION OF NON-SELF-ALIGNED BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)

=FORMATION OF NON-SELF-ALIGNED BACKSIDE CONTACT=


==Organization Name==

[[:Category:International Business Machines Corporation|International Business Machines Corporation]]


[[Category:International Business Machines Corporation]]

==Inventor(s)==

[[:Category:Tao Li of Slingerlands NY (US)|Tao Li of Slingerlands NY (US)]][[Category:Tao Li of Slingerlands NY (US)]]

[[:Category:Kisik Choi of Watervliet NY (US)|Kisik Choi of Watervliet NY (US)]][[Category:Kisik Choi of Watervliet NY (US)]]

[[:Category:Nicolas Jean Loubet of Guilderland NY (US)|Nicolas Jean Loubet of Guilderland NY (US)]][[Category:Nicolas Jean Loubet of Guilderland NY (US)]]

[[:Category:Julien Frougier of Albany NY (US)|Julien Frougier of Albany NY (US)]][[Category:Julien Frougier of Albany NY (US)]]

[[:Category:Ruilong Xie of Niskayuna NY (US)|Ruilong Xie of Niskayuna NY (US)]][[Category:Ruilong Xie of Niskayuna NY (US)]]

==FORMATION OF NON-SELF-ALIGNED BACKSIDE CONTACT - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18146988 titled 'FORMATION OF NON-SELF-ALIGNED BACKSIDE CONTACT

The semiconductor device described in the patent application includes a transistor device with source and drain regions, as well as a gate region. A bottom dielectric isolation layer is situated on the backside of the transistor device, followed by a buffer layer. A first conductive contact is positioned on the backside of the transistor device, connecting to the source and drain regions through the bottom dielectric isolation layer and buffer layer. Additionally, a second conductive contact is in contact with the gate region from the front side.

* The patent application introduces a semiconductor device with innovative backside contact configurations.
* The device features a bottom dielectric isolation layer and a buffer layer for improved performance.
* The first conductive contact enables connectivity to the source and drain regions through multiple layers.
* The second conductive contact provides a connection to the gate region from the front side.
* This technology aims to enhance the efficiency and functionality of semiconductor devices.

Potential Applications:
- This technology can be applied in the development of advanced integrated circuits.
- It may find use in the manufacturing of high-performance electronic devices.

Problems Solved:
- Improved connectivity and performance in semiconductor devices.
- Enhanced functionality and efficiency in electronic components.

Benefits:
- Enhanced performance and efficiency in semiconductor devices.
- Increased connectivity options for integrated circuits.

Commercial Applications:
Title: Advanced Semiconductor Device Technology for Enhanced Performance
This technology can be utilized in the production of high-performance electronic devices, leading to improved efficiency and functionality in various commercial applications such as consumer electronics, telecommunications, and computing.

Questions about Semiconductor Device Technology:
1. How does the backside contact configuration improve the performance of the semiconductor device?
- The backside contact configuration allows for enhanced connectivity and efficiency in the device, leading to improved overall performance.
2. What are the potential commercial applications of this semiconductor device technology?
- This technology can be applied in various industries such as consumer electronics, telecommunications, and computing, where high-performance electronic devices are required.


==Original Abstract Submitted==

A semiconductor device includes a transistor device, including a source and drain region, and a gate region. A bottom dielectric isolation layer is on a backside of the transistor device. A buffer layer is on a backside of the bottom dielectric isolation layer. A first conductive contact is positioned on a backside of the transistor device in contact with a backside of the source and drain region, through the bottom dielectric isolation layer and through the buffer layer. A second conductive contact is in contact with the gate region from a frontside of the gate region.



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