View source for 18145003. FORK SHEET DEVICE WITH WRAPPED SOURCE AND DRAIN CONTACT TO PREVENT NFET TO PFET CONTACT SHORTAGE IN A TIGHT SPACE simplified abstract (International Business Machines Corporation)

=FORK SHEET DEVICE WITH WRAPPED SOURCE AND DRAIN CONTACT TO PREVENT NFET TO PFET CONTACT SHORTAGE IN A TIGHT SPACE=


==Organization Name==

[[:Category:International Business Machines Corporation|International Business Machines Corporation]]


[[Category:International Business Machines Corporation]]

==Inventor(s)==

[[:Category:Shravana Kumar Katakam of Lehi UT (US)|Shravana Kumar Katakam of Lehi UT (US)]][[Category:Shravana Kumar Katakam of Lehi UT (US)]]

[[:Category:Tao Li of Slingerlands NY (US)|Tao Li of Slingerlands NY (US)]][[Category:Tao Li of Slingerlands NY (US)]]

[[:Category:Indira Seshadri of Niskayuna NY (US)|Indira Seshadri of Niskayuna NY (US)]][[Category:Indira Seshadri of Niskayuna NY (US)]]

[[:Category:Ruilong Xie of Niskayuna NY (US)|Ruilong Xie of Niskayuna NY (US)]][[Category:Ruilong Xie of Niskayuna NY (US)]]

==FORK SHEET DEVICE WITH WRAPPED SOURCE AND DRAIN CONTACT TO PREVENT NFET TO PFET CONTACT SHORTAGE IN A TIGHT SPACE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18145003 titled 'FORK SHEET DEVICE WITH WRAPPED SOURCE AND DRAIN CONTACT TO PREVENT NFET TO PFET CONTACT SHORTAGE IN A TIGHT SPACE

The microelectronic device described in the patent application includes a unique structure where a first source and drain structure is adjacent to a second source and drain structure. 

* The device features a first conductive contact in contact with the top and side surfaces of the first source and drain structure, as well as a second conductive contact in contact with the top and side surfaces of the second source and drain structure.
* The second conductive contact includes a via extension to connect to a backside component, enhancing connectivity and functionality.
* A separating layer is positioned between the first and second conductive contacts, with one sidewall flush with the first contact and the other sidewall flush with the second contact.

Potential Applications:
- This technology could be applied in the development of advanced microelectronic devices for various industries such as telecommunications, computing, and consumer electronics.

Problems Solved:
- The design of this device addresses the need for improved connectivity and functionality in microelectronic devices, enhancing overall performance.

Benefits:
- Enhanced connectivity and functionality in microelectronic devices.
- Improved performance and reliability in electronic systems.

Commercial Applications:
- The technology could be utilized in the production of high-performance electronic devices for commercial use, potentially impacting industries such as telecommunications, computing, and consumer electronics.

Questions about the technology:
1. How does the via extension in the second conductive contact improve connectivity in the device?
   - The via extension allows for a connection to a backside component, enhancing overall functionality and performance.
2. What are the potential market implications of this innovative microelectronic device design?
   - The technology could lead to the development of more advanced and reliable electronic systems, potentially impacting various industries.


==Original Abstract Submitted==

A microelectronic device includes a first source and drain structure adjacent to a second source and drain structure. A first conductive contact is in contact with a top surface and side surface of the first source and drain structure. A second conductive contact is in contact with a top surface and side surface of the second source and drain structure. The second conductive contact includes a via extension to connect to a backside component. A separating layer is located between the first conductive contact and the second conductive contact. A first sidewall of the separating layer is flush with the first conductive contact. A second sidewall of the separating layer is flush with the second conductive contact.



[[Category:H01L27/092]]
[[Category:H01L23/50]]
[[Category:H01L23/522]]
[[Category:H01L29/08]]
[[Category:H01L29/66]]
[[Category:CPC_H01L27/092]]