View source for 18139840. ATOMIC LAYER ETCHING (ALE) APPARATUS AND ALE METHOD BASED ON THE APPARATUS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=ATOMIC LAYER ETCHING (ALE) APPARATUS AND ALE METHOD BASED ON THE APPARATUS=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Seungmin Shin of Suwon-si (KR)|Seungmin Shin of Suwon-si (KR)]][[Category:Seungmin Shin of Suwon-si (KR)]]

[[:Category:Joonyoung Kim of Suwon-si (KR)|Joonyoung Kim of Suwon-si (KR)]][[Category:Joonyoung Kim of Suwon-si (KR)]]

[[:Category:Kijong Park of Suwon-si (KR)|Kijong Park of Suwon-si (KR)]][[Category:Kijong Park of Suwon-si (KR)]]

[[:Category:Sunjoong Song of Suwon-si (KR)|Sunjoong Song of Suwon-si (KR)]][[Category:Sunjoong Song of Suwon-si (KR)]]

[[:Category:Seungcheol Chae of Suwon-si (KR)|Seungcheol Chae of Suwon-si (KR)]][[Category:Seungcheol Chae of Suwon-si (KR)]]

==ATOMIC LAYER ETCHING (ALE) APPARATUS AND ALE METHOD BASED ON THE APPARATUS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18139840 titled 'ATOMIC LAYER ETCHING (ALE) APPARATUS AND ALE METHOD BASED ON THE APPARATUS

==Simplified Explanation==

The abstract describes an atomic layer etching (ALE) method that involves several operations including loading a substrate onto a chuck, cooling the substrate, forming a modified layer on the substrate through a reaction between a first source gas and the substrate surface, heating the substrate, and removing the modified layer through a reaction between a second source gas and the modified layer.

* Loading the substrate onto a chuck
* Cooling the substrate to a first temperature
* Forming a modified layer on the substrate through a reaction between a first source gas and the substrate surface
* Heating the substrate to a second temperature
* Removing the modified layer of the substrate through a reaction between a second source gas and the modified layer

Potential applications of this technology:
* Semiconductor manufacturing: This ALE method can be used in the fabrication of semiconductor devices, where precise etching is required to create patterns and structures on the substrate.
* Thin film deposition: The ALE method can be used to deposit thin films with high precision and control, which is important in various industries such as electronics, optics, and solar cells.

Problems solved by this technology:
* Precise and controlled etching: The ALE method allows for precise removal of material from the substrate surface, enabling the creation of intricate patterns and structures.
* Surface modification: The formation of a modified layer on the substrate surface allows for the introduction of desired properties or functionalities to the material.

Benefits of this technology:
* High precision and control: The ALE method offers precise control over the etching process, resulting in accurate and uniform removal of material.
* Selective etching: The ALE method allows for selective removal of specific materials or layers, enabling complex device fabrication.
* Surface modification capabilities: The formation of a modified layer on the substrate surface provides opportunities for tailoring the material properties to specific applications.


==Original Abstract Submitted==

Provided is an atomic layer etching (ALE) method including operation (a) of loading a substrate having a first surface and a second surface facing each other onto a chuck, operation (b) of cooling the substrate to a first temperature through a cooling fluid, operation (c) of forming a modified layer on the substrate through a reaction between a first source gas and the first surface of the substrate by spraying the first source gas toward the substrate from a shower head positioned above the chuck, operation (d) of heating the substrate to a second temperature through a laser beam, and operation (e) of removing the modified layer of the substrate through a reaction between a second source gas and the modified layer of the substrate by spraying the second source gas from the shower head toward the first surface of the substrate.



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[[Category:H01L21/67]]
[[Category:H01L21/687]]